Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system

ABSTRACTWe investigated the possibilities of vapour phase epitaxy in an open tube chloride system for thick GaN film deposition on sapphire substrates. The methodes of the buffer layer deposition were proposed and developed. The methods of fast ( up to 100 microns / hour ) was developed. Parameters of good quality gallium nitride epitaxy were obtained.To determine the quality of fast grown epitaxial layers we used X-ray diffraction and photoluminescence measurements. The halfwidth of the rocking curve for the best samples was equal to 4-6 minutes. Luminescense spectrum ( T=77K ) had a maximum near 3.46 eV. A signal in the visible wavelength range was hardly observed. Polished layers were transparent.A special initial treatment of the substrates allowed us to separate thick ( up to 300 micron ) epitaxial gallium nitride layers from sapphire. It was shown that it is possible to use separated films for homoepitaxy of GaN.

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Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)

AIP Advances ◽

10.1063/5.0053865 ◽

2021 ◽

Vol 11 (7) ◽

pp. 075013

Author(s):

F. Meier ◽

M. Protte ◽

E. Baron ◽

M. Feneberg ◽

R. Goldhahn ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth

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In Situ Optical Analysis of the Gas Phase during the Deposition of Silicon Carbide from Methyltrichlorosilane

Journal of The Electrochemical Society ◽

10.1149/1.1836694 ◽

1996 ◽

Vol 143 (5) ◽

pp. 1654-1661 ◽

Cited By ~ 25

Author(s):

M. Ganz ◽

N. Dorval ◽

M. Lefebvre ◽

M. Péalat ◽

F. Loumagne ◽

...

Keyword(s):

Silicon Carbide ◽

Gas Phase ◽

Optical Analysis

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The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

Technical Physics Letters ◽

10.1134/s1063785015050314 ◽

2015 ◽

Vol 41 (5) ◽

pp. 476-478 ◽

Cited By ~ 1

Author(s):

Yu. V. Zhilyaev ◽

V. V. Zelenin ◽

T. A. Orlova ◽

V. N. Panteleev ◽

N. K. Poletaev ◽

...

Keyword(s):

Gallium Nitride ◽

Epitaxial Growth ◽

Gas Phase

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Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

MRS Proceedings ◽

10.1557/proc-250-29 ◽

1991 ◽

Vol 250 ◽

Cited By ~ 1

Author(s):

Mark D. Allendorf ◽

Carl F. Melius

Keyword(s):

Silicon Carbide ◽

Gas Phase ◽

Theoretical Study ◽

Chemical Vapor ◽

Deposition Process ◽

Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

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