335. Epitaxial growth of InxGa1−x solid solutions from the gas phase

Vacuum ◽  
1974 ◽  
Vol 24 (3) ◽  
pp. 146
Keyword(s):  
Epitaxial Growth ◽  
Gas Phase ◽  
Solid Solutions

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

2015 ◽  
Vol 41 (5) ◽  
pp. 476-478 ◽  
Author(s):  
Yu. V. Zhilyaev ◽  
V. V. Zelenin ◽  
T. A. Orlova ◽  
V. N. Panteleev ◽  
N. K. Poletaev ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Gas Phase

Supersaturated solid solutions after solid phase epitaxial growth in Bi‐implanted silicon

1980 ◽  
Vol 37 (2) ◽  
pp. 170-172 ◽  
Author(s):  
S. U. Campisano ◽  
E. Rimini ◽  
P. Baeri ◽  
G. Foti
Keyword(s):  
Epitaxial Growth ◽  
Solid Solutions ◽  
Solid Phase ◽  
Supersaturated Solid Solutions

Gas-phase synthesis of single crystals of Ge–Si system

2020 ◽  
Vol 34 (19) ◽  
pp. 2050178
Author(s):  
Aynur I. Hashimova
Keyword(s):  
Temperature Gradient ◽  
Single Crystals ◽  
Gas Phase ◽  
Vapor Phase ◽  
Solid Solutions ◽  
Closed Volume ◽  
Phase Synthesis ◽  
Polycrystalline Layer ◽  
Cold Zone ◽  
Hot Zone

In this study, the synthesis of single crystals of solid solutions Ge[Formula: see text]Si[Formula: see text] from the gas phase was performed in two different variants. Here, the vapor phase is created in a closed volume. A special ampoule has been made for this purpose. Ge–Si is placed near one end of the ampoule. A temperature gradient is created along the ampoule. The temperature of the hot zone was chosen to be [Formula: see text]C and the temperature of the cold zone to be [Formula: see text]C. It has been found that single crystals can form not only on the polycrystalline layer, but also from separate centers on the walls of the ampoule.

Mechanisms of Molecular Beam Epitaxial Growth on Reconstructed Si{100}: Thermal and Energized Beams

1988 ◽  
Vol 141 ◽  
Author(s):  
B. J. Garrison ◽  
M. T. Miller ◽  
D.W. Brenner
Keyword(s):  
Molecular Dynamics ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Molecular Beam ◽  
Energy Deposition ◽  
Amorphous Structure ◽  
Molecular Beam Epitaxial ◽  
Dynamics Simulations ◽  
Molecular Beam Epitaxial Growth

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.

Delayed Luminescence of 8-Aza-D-Homogone-1,3,5(10),13-Tetraene-12,17a-Dione in the Gas Phase and Solid Solutions

2005 ◽  
Vol 72 (2) ◽  
pp. 202-207
Author(s):  
N. A. Borisevich ◽  
T. F. Raichenok ◽  
A. A. Sukhodola ◽  
G. B. Tolstorozhev
Keyword(s):  
Gas Phase ◽  
Solid Solutions ◽  
Delayed Luminescence

Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive

2005 ◽  
Vol 483-485 ◽  
pp. 73-76 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Olof Kordina ◽  
Z. Shishkin ◽  
Shailaja P. Rao ◽  
R. Everly ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Hydrogen Chloride ◽  
Growth Rates ◽  
Growth Process ◽  
Cluster Formation ◽  
Film Morphology ◽  
Hydrogen Carrier ◽  
Low Crystalline

Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.

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