Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses

2018 ◽  
Vol 44 (12) ◽  
pp. 1160-1162 ◽  
Author(s):  
D. O. Filatov ◽  
V. V. Karzanov ◽  
I. N. Antonov ◽  
O. N. Gorshkov
Keyword(s):  
High Resistance ◽  
High Resistance State ◽  
Resistance State

Enhanced Resistance Switching of Ga2O3 Thin Films by Ultraviolet Radiation

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang
Keyword(s):  
Ultraviolet Radiation ◽  
High Resistance ◽  
High Resistance State ◽  
High Ratio ◽  
Resistance Switching ◽  
Resistive State ◽  
Oxide Systems ◽  
Low Resistance ◽  
Resistance State

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.

Study of the Structural Transformation of Ge2Sb2Te5 Induced by Current Pulse in Phase Change Memory

2003 ◽  
Vol 803 ◽  
Author(s):  
Rong Zhao ◽  
Tow Chong Chong ◽  
Lu Ping Shi ◽  
Pik Kie Tan ◽  
Hao Meng ◽  
...  
Keyword(s):  
Phase Change ◽  
Structural Transformation ◽  
Active Layer ◽  
High Resistance ◽  
Phase Change Memory ◽  
High Resistance State ◽  
Face Centered Cubic ◽  
Cycle Number ◽  
Resistance State ◽  
Change Memory

ABSTRACTThe electrical induced structural transformation of Ge2Sb2Te5 thin film in phase change memory device was investigated using micro-Raman spectroscopy and transmission electronic microscopy (TEM). Selected area electron diffraction (SAD) pattern showed that the electrical-induced Ge2Sb2Te5 film was crystallized into a face-centered cubic structure. Micro-Raman spectra show that the Ge2Sb2Te5 active layer at the high resistance state exhibited two minor peaks superposed on the broad peak after several switch cycles, which is identical to those of the Ge2Sb2Te5 active layer at the low resistance state. This is most likely due to the accumulation of segregated crystallites. TEM results suggest that the existence of nano-sized nuclei clusters resulted in the reduced resistance for the Ge2Sb2Te5 active layer at the high resistance state after first several switches. The dependence of resistance on the cycle number indicates that the deterioration of the Ge2Sb2Te5 active layer is resulted from the incomplete amorphization process, which is consistent with the micro-Raman results.

Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM

2020 ◽  
Vol 53 (39) ◽  
pp. 395101 ◽  
Author(s):  
Shih-Kai Lin ◽  
Cheng-Hsien Wu ◽  
Min-Chen Chen ◽  
Ting-Chang Chang ◽  
Chen-Hsin Lien ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
High Resistance ◽  
State Level ◽  
High Resistance State ◽  
Resistance State

scholarly journals Electric Modulation of Conduction in MAPbBr3 Single Crystals

2020 ◽  
Author(s):  
Shanming Ke ◽  
Shangyu Luo ◽  
Jinhui Gong ◽  
Liwen Qiu ◽  
Renhong Liang ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystals ◽  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Pt Symmetry ◽  
Interface Trap ◽  
Electrode Area ◽  
Resistance State ◽  
Open Question

Abstract The resistive switching (RS) mechanism of hybrid organic-inorganic perovskites is an open question until now. Here, a switchable diode-like RS behavior in MAPbBr3 single crystals using Au (or Pt) symmetry electrodes is reported. Both the high resistance state (HRS) and low resistance state (LRS) are electrode-area dependent and light responsive. We propose an electric-field-driven inner p-n junction accompanied by an interface trap-controlled SCLC mechanism to explain this switchable diode-like RS behavior in MAPbBr3 single crystals.

scholarly journals New Thick Film Functional Devices

1981 ◽  
Vol 8 (1-2) ◽  
pp. 77-82
Author(s):  
Y. Taketa ◽  
O. Abe ◽  
M. Haradome
Keyword(s):  
Thick Film ◽  
High Resistance ◽  
Recovery Time ◽  
High Resistance State ◽  
Negative Resistance ◽  
Resistance Change ◽  
Low Resistance ◽  
Non Volatile Memory ◽  
Resistance State ◽  
Oscillation Characteristic

The development of thick-film functional devices having oscillation, negative resistance, switching, memory and so on has been needed.New non-volatile memory devices manufactured of Nb2O5-based thick-film have now been created. The thick-film devices have been prepared by using common thick-film technology such as screen printing, drying and firing. The characteristics and the operation of the devices are as follows:When a dc voltage is applied to the devices, rapid resistance change, so called switching effect, occurs. The devices have low resistance state. Even when the voltage is removed completely, the devices do not return to high resistance state and keep low resistance state. However, when alternating voltage is impressed upon the devices, the low resistance state goes to the high resistance state. The recovery time of the resistance state depends upon the frequency of applied ac voltage. The higher frequency voltage that is applied, the sooner the recovery time becomes. The threshold voltage exponentially increases with higher frequency of an applied ac voltage.In addition to the memory effect, the Nb2O5-based thick-film devices have a switching and oscillation characteristic.

An Increasing High Resistance State Phenomenon in Al/VOx/Cu Resistive Switching Device

2014 ◽  
Vol 60 (1) ◽  
pp. 1057-1062 ◽  
Author(s):  
K. Sun ◽  
K. Zhang ◽  
F. Wang ◽  
W. Sun ◽  
T. Lu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Switching Device ◽  
Resistance State

Resistive Switching Characteristics of Cu/SiO2/Pt Structure

2011 ◽  
Vol 687 ◽  
pp. 167-173 ◽  
Author(s):  
Chih Yi Liu ◽  
Po Wei Sung ◽  
Chun Hung Lai ◽  
Hung Yu Wang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
High Resistance State ◽  
Simple Method ◽  
Well Control ◽  
Low Resistance ◽  
Initial Resistance ◽  
Resistance State ◽  
Switching Characteristics

SiO2thin films were fabricated as resistive layers of Cu/SiO2/Pt devices to investigate resistive switching properties. A thermal annealing was performed to allow for the diffusion of Cu ions into the SiO2thin films, leading to the formation of Cu-doped SiO2layers. Occurrence probabilities of the resistive switching and initial resistance-states of the devices were influenced by SiO2thickness, which was dependent on the Cu diffusion status within the SiO2layer. The resistive switching behaviors were characterized by the voltage sweeping mode and the current sweeping mode. The current sweeping mode provided a desired compliance current to well control the resistive switching from the high resistance-state to the low resistance-state (SET). Therefore, the large RESET (from the low resistance-state to the high resistance-state) current was not inherent in the device, due to poor control of the compliance current by the voltage sweeping mode. The current sweeping mode is a simple method to characterize the RESET current.

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