Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

2009 ◽  
Vol 48 (12) ◽  
pp. 121002 ◽  
Author(s):  
Josephine Selvaraj ◽  
S. Lawrence Selvaraj ◽  
Takashi Egawa
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Layer Growth ◽  
High Electron ◽  
Growth Pressure ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

2019 ◽  
Vol 45 (8) ◽  
pp. 761-764
Author(s):  
T. V. Malin ◽  
D. S. Milakhin ◽  
I. A. Aleksandrov ◽  
V. E. Zemlyakov ◽  
V. I. Egorkin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Resistance ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Buffer Layer
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