The Use of Microdisk Lasers Based on InAs/InGaAs Quantum Dots in Biodetection

2019 ◽  
Vol 45 (12) ◽  
pp. 1178-1181
Author(s):  
M. V. Fetisova ◽  
A. A. Kornev ◽  
A. S. Bukatin ◽  
N. A. Filatov ◽  
I. E. Eliseev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Microdisk Lasers

scholarly journals Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

2018 ◽  
Vol 1124 ◽  
pp. 041020
Author(s):  
I Y Agafonov ◽  
N V Kryzhanovskaya ◽  
E I Moiseev ◽  
A S Dragunova ◽  
M V Fetisova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Microdisk Lasers ◽  
Coating Layers

Vertically coupled double-microdisk lasers composed of InGaAs quantum dots-in-a-well active layers

2017 ◽  
Vol 121 (20) ◽  
pp. 203107
Author(s):  
J. Y. Hsing ◽  
T. E. Tzeng ◽  
T. S. Lay ◽  
M. H. Shih
Keyword(s):  
Quantum Dots ◽  
Active Layers ◽  
Microdisk Lasers

scholarly journals Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

2019 ◽  
Vol 45 (23) ◽  
pp. 10
Author(s):  
М.В. Фетисова ◽  
А.А. Корнев ◽  
А.С. Букатин ◽  
Н.А. Филатов ◽  
И.Е. Елисеев ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monoclonal Antibodies ◽  
Active Region ◽  
Room Temperature ◽  
Optical Pumping ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Microdisk Lasers ◽  
Resonant Laser ◽  
Secondary Antibodies

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

scholarly journals High-temperature lasing in diode microdisk lasers with InAs/InGaAs quantum dots

2016 ◽  
Vol 769 ◽  
pp. 012056 ◽  
Author(s):  
E I Moiseev ◽  
N V Kryzhanovskaya ◽  
Yu S Polubavkina ◽  
M V Maximov ◽  
M M Kulagina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Microdisk Lasers

scholarly journals Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012081
Author(s):  
N A Fominykh ◽  
E I Moiseev ◽  
Ju A Guseva ◽  
M V Maximov ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Well ◽  
Output Power ◽  
Optical Power ◽  
Threshold Current ◽  
Sudden Drop ◽  
Output Optical Power ◽  
Number Of Layers ◽  
Microdisk Lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

2020 ◽  
Vol 54 (2) ◽  
pp. 263-267 ◽  
Author(s):  
E. I. Moiseev ◽  
M. V. Maximov ◽  
N. V. Kryzhanovskaya ◽  
O. I. Simchuk ◽  
M. M. Kulagina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Comparative Analysis ◽  
Quantum Wells ◽  
Microdisk Lasers

Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip

2018 ◽  
Vol 39 (8) ◽  
pp. 084003 ◽  
Author(s):  
Pengyi Yue ◽  
Xiuming Dou ◽  
Xiangbin Su ◽  
Zhichuan Niu ◽  
Baoquan Sun
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Optically Pumped ◽  
Microdisk Lasers

scholarly journals Integrated Silicon Nitride Microdisk Lasers Based on Quantum Dots

2016 ◽  
Author(s):  
Weiqiang Xie ◽  
Thilo Stöferle ◽  
Gabriele Rainò ◽  
Tangi Aubert ◽  
Yunpeng Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Microdisk Lasers

Single-Mode Emission From 4–9-μm Microdisk Lasers With Dense Array of InGaAs Quantum Dots

2015 ◽  
Vol 33 (1) ◽  
pp. 171-175 ◽  
Author(s):  
Natalia V. Kryzhanovskaya ◽  
Mikhail V. Maximov ◽  
Alexey E. Zhukov ◽  
Alexey M. Nadtochiy ◽  
Eduard I. Moiseev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Single Mode ◽  
Dense Array ◽  
Microdisk Lasers

scholarly journals Сравнительный анализ инжекционных микродисковых лазеров на основе квантовых ям InGaAsN и квантовых точек InAs/InGaAs

2020 ◽  
Vol 54 (2) ◽  
pp. 212
Author(s):  
Э.И. Моисеев ◽  
М.В. Максимов ◽  
Н.В. Крыжановская ◽  
О.И. Симчук ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Room Temperature ◽  
Optical Transition ◽  
Active Regions ◽  
Lasing Threshold ◽  
Radiated Power ◽  
Microdisk Lasers ◽  
Laser Modes ◽  
Comparable Size

The results are presented on a comparative analysis of the spectral and threshold characteristics of diode microdisk lasers operating at room temperature in a spectral range of 1.2xx μm with different active regions: InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots. It was found that microlasers of a comparable size with quantum wells have higher lasing threshold compared to microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of the radiated power with the laser modes. They are also characterized by a jump to excited-state optical transition lasing. The InGaAsN-based microdisk lasers lack these disadvantages.

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