Vertically coupled double-microdisk lasers composed of InGaAs quantum dots-in-a-well active layers

2017 ◽  
Vol 121 (20) ◽  
pp. 203107
Author(s):  
J. Y. Hsing ◽  
T. E. Tzeng ◽  
T. S. Lay ◽  
M. H. Shih
Keyword(s):  
Quantum Dots ◽  
Active Layers ◽  
Microdisk Lasers

scholarly journals Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

2018 ◽  
Vol 1124 ◽  
pp. 041020
Author(s):  
I Y Agafonov ◽  
N V Kryzhanovskaya ◽  
E I Moiseev ◽  
A S Dragunova ◽  
M V Fetisova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Microdisk Lasers ◽  
Coating Layers

Resistive Switching in CdTe/CdSe Core–Shell Quantum Dots Embedded Chitosan-Based Memory Devices

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Core Shell ◽  
Cdse Core ◽  
Active Layers ◽  
Ag Electrodes ◽  
Exponential Decrease ◽  
Conductive Bridge ◽  
Bipolar Memory ◽  
State Resistance

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

scholarly journals PMMA Thin Film with Embedded Carbon Quantum Dots for Post-Fabrication Improvement of Light Harvesting in Perovskite Solar Cells

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 291 ◽  
Author(s):  
Askar A. Maxim ◽  
Shynggys N. Sadyk ◽  
Damir Aidarkhanov ◽  
Charles Surya ◽  
Annie Ng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Fill Factor ◽  
Light Harvesting ◽  
Incident Light ◽  
Perovskite Solar Cells ◽  
Carbon Quantum Dots ◽  
Active Layers ◽  
Before And After ◽  
Down Conversion

Perovskite solar cells (PSCs) with a standard sandwich structure suffer from optical transmission losses due to the substrate and its active layers. Developing strategies for compensating for the losses in light harvesting is of significant importance to achieving a further enhancement in device efficiencies. In this work, the down-conversion effect of carbon quantum dots (CQDs) was employed to convert the UV fraction of the incident light into visible light. For this, thin films of poly(methyl methacrylate) with embedded carbon quantum dots (CQD@PMMA) were deposited on the illumination side of PSCs. Analysis of the device performances before and after application of CQD@PMMA photoactive functional film on PSCs revealed that the devices with the coating showed an improved photocurrent and fill factor, resulting in higher device efficiency.

scholarly journals Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

2019 ◽  
Vol 45 (23) ◽  
pp. 10
Author(s):  
М.В. Фетисова ◽  
А.А. Корнев ◽  
А.С. Букатин ◽  
Н.А. Филатов ◽  
И.Е. Елисеев ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monoclonal Antibodies ◽  
Active Region ◽  
Room Temperature ◽  
Optical Pumping ◽  
Threshold Power ◽  
Gaas Substrates ◽  
Microdisk Lasers ◽  
Resonant Laser ◽  
Secondary Antibodies

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

Double Active Layers Constructed with Halide Perovskite and Quantum Dots for Broadband Photodetection

2020 ◽  
Vol 8 (17) ◽  
pp. 2000557 ◽  
Author(s):  
Ruiqi Guo ◽  
Chunxiong Bao ◽  
Feng Gao ◽  
Jianjun Tian
Keyword(s):  
Quantum Dots ◽  
Active Layers ◽  
Halide Perovskite

scholarly journals A Novel Phototransistor Device with Dual Active Layers Composited of CsPbBr3 and ZnO Quantum Dots

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1215 ◽  
Author(s):  
Xu Zhang ◽  
Qing Li ◽  
Shikai Yan ◽  
Wei Lei ◽  
Jing Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Low Cost ◽  
Conducting Layer ◽  
Light Illumination ◽  
High Electron ◽  
Zno Film ◽  
Active Layers ◽  
Zno Qds ◽  
Photodetector Device

Taking advantage of a large light absorption coefficient, long charge carrier diffusion length and low-cost solution processing, all-inorganic halides perovskite CsPbBr3 quantum dots (QDs) are combined with a ZnO QD film to construct a high-performance photodetector. In this work, a novel photodetector device based on transistor structure with dual active layers composed of CsPbBr3 and ZnO film is proposed. In this structure, CsPbBr3 film functions as the light-absorbing layer and ZnO film acts as the conducting layer. Owing to the high electron mobility and hole-blocking nature of the ZnO QDs film, the photo-induced electron-hole pairs can be separated efficiently. As a result, the device exhibits high performance with response of 43.5 A/W, high detection up to 5.02 × 1011 Jones and on/off ratio of 5.6 × 104 under 365 nm light illumination. Compared with the ZnO-only phototransistor (the photodetector with the structure of transistor) the performance of the CsPbBr3 phototransistor showed significant improvement, which is superior to the majority of photodetectors prepared by perovskite. This work demonstrates that the ZnO QDs film can be applied in the photodetector device as a functional conducting layer, and we believe that the hybrid CsPbBr3/ZnO phototransistor would promote the development of low-cost and high-performance photodetectors.

The Use of Microdisk Lasers Based on InAs/InGaAs Quantum Dots in Biodetection

2019 ◽  
Vol 45 (12) ◽  
pp. 1178-1181
Author(s):  
M. V. Fetisova ◽  
A. A. Kornev ◽  
A. S. Bukatin ◽  
N. A. Filatov ◽  
I. E. Eliseev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Microdisk Lasers

scholarly journals Improving charge transport by the ultrathin QDs interlayer in polymer solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (32) ◽  
pp. 17914-17920 ◽  
Author(s):  
Zicha Li ◽  
Suling Zhao ◽  
Zheng Xu ◽  
Wageh Swelm ◽  
Dandan Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Charge Transport ◽  
Lead Sulfide ◽  
Polymer Solar Cells ◽  
Active Layers ◽  
Pbs Quantum Dots

Lead sulfide (PbS) quantum dots (QDs) have been incorporated into PTB7:PC71BM BHJ active layers to fabricate polymer solar cells (PSCs) and gather on the top surface of active layers to form an ultrathin interlayer.

scholarly journals High-temperature lasing in diode microdisk lasers with InAs/InGaAs quantum dots

2016 ◽  
Vol 769 ◽  
pp. 012056 ◽  
Author(s):  
E I Moiseev ◽  
N V Kryzhanovskaya ◽  
Yu S Polubavkina ◽  
M V Maximov ◽  
M M Kulagina ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Microdisk Lasers

scholarly journals Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

2021 ◽  
Vol 2086 (1) ◽  
pp. 012081
Author(s):  
N A Fominykh ◽  
E I Moiseev ◽  
Ju A Guseva ◽  
M V Maximov ◽  
A I Lihachev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Active Region ◽  
Quantum Well ◽  
Output Power ◽  
Optical Power ◽  
Threshold Current ◽  
Sudden Drop ◽  
Output Optical Power ◽  
Number Of Layers ◽  
Microdisk Lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

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