Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

EDFA AND EYCDFA POWER BOOSTER FOR SECURED, HIGH SPEED AND MULTIPLE WAVELENGTH SERVICES IN OPTICAL COMMUNICATION SYSTEMS USING WDM AND QUAD-SINGLE FORWARD AND TRI BACKWARD PUMPING TECHNIQUE

Proposed the EDFA and EYCDFA power booster (Erbium Doped Fiber Amplifier- Erbium ytterbium co doped fiber amplifier) with quad pumping for high speed and multi wavelength services in an optical communication. The proposed EDFA and EYCDFA power booster with WDM(Wavelength division multiplexing) simulated by dual forward and Backward pumping, Dual-backward pumping, Tri-single forward and dual backward pumping and Quadsingle forward and tri-backward pumping with respect to Pump power and fiber Length. The parameters Input Optical power, Output Optical power, Forward Signal power, Backward Signal power measured and determined the speed of transmission in all types of pumping methods. From that the proposed EDFA- ans EYCDFA power booster with WDM quad pumping is the best suitable for secured high speed optical telecommunication systems. The results shown in Quad pumping Output optical power is maximum 25.2dB and optimum spectral forward Signal power is 30.5dBm and very less spectral optical backward signal power of -25.4dBm with Length 5m

Увеличение оптической мощности микродисковых лазеров InGaAs/GaAs, перенесенных на кремниевую подложку методом термокомпрессии

The output power is studied under continuous-wave operation of microdisk lasers with InGaAs/GaAs quantum well-dots hybridly integrated with a silicon substrate with the epitaxial side down using the thermocompression bonding method. Owing a decrease in the thermal resistance and suppression of self-heating, an increase in the values of currents is observed at which the power is saturated and the lasing is quenched, as well as an increase in the peak power. In microdisks with a diameter of 19 µm, the highest output optical power in the continuous wave regime was 9.4 mW.

Исследование шумовых характеристик вертикально-излучающих лазеров с ромбовидной токовой апертурой для применения в компактном квантовом цезиевом магнитометре

The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero magnetic field optically pumped atomic magnetometers (OPM) with a 133Cs vapor cell for magnetoencephalographic (MEG) systems were demonstrated. Relative intensity noise (RIN) and polarization resolved RIN of the IC-VCSEL in the 895 nm range with different mirror losses (linewidth) in the frequency range from 1 Hz to 100 kHz were experimentally investigated. Lasers with low mirror loss (narrow linewidth) have polarization resolved RIN comparable to amplitude noise. For IC-VCSEL with an output optical power of 0.8 mW and a linewidth of 55 MHz, the noise level measured is 148 dB/Hz in 1 Hz bandwidth at 40 kHz frequency. The ultimate sensitivity of OPM based on two-beam MX scheme with studied VCSELs was estimated as ~ 11 fT/√Hz.

Мощные квантово-каскадные лазеры с длиной волны генерации 8 μm

The heterostructure of a quantum-cascade laser based on In0.53Ga0.47As/Al0.48In0.52As heteropair lattice matched with the InP was grown by molecular beam epitaxy. InP layers was used to form the optical waveguide. Room temperature lasing in the spectral range of 8 μm in the standard ridge geometry of a Fabry-Perot cavity formed by cleaved facets with peak output optical power of 0.45 W was obtained.

Experiment Investigation of the Temperature Characteristics of 975nm SLD

The output optical power and spectra of a 975 nm semiconductor laser diode (SLD) were measured and analyzed when the SLD was operated with different current in the temperature range of -10°C—65°C. The results showed that the output center wavelength of the SLD shifts in the direction of long wavelength as the operation current and temperature rises. The slopes were approximately 0.24nm/100mA and 0.36nm/°C, respectively. Furthermore, the Conversion efficiency of the SLD was higher when the temperature was low. The reasons for the red shift of SLD was theoretical analyzed.