Output power of multilayered InGaAs/GaAs quantum well-dot microdisk lasers

Abstract We studied the output optical power of microdisk lasers with InGaAs/GaAs quantum dots active region. An increase in the number of layers in the active region in the waveguide from 2 to 6 leads to increase in the peak output optical power due probably to increase of the gain. We also observe a corresponding increase of the threshold current due to the increase on the transparence current. The maximal optical power is achieved for structure with 6 layers at approximately 60 mA injection current. Further increase of the number of the QD layers to 10 results in increase of the threshold current and sudden drop of the output power.

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Influence of coating layers on characteristics of microdisk lasers with InAs/InGaAs quantum dots active region

Journal of Physics Conference Series ◽

10.1088/1742-6596/1124/4/041020 ◽

2018 ◽

Vol 1124 ◽

pp. 041020

Author(s):

I Y Agafonov ◽

N V Kryzhanovskaya ◽

E I Moiseev ◽

A S Dragunova ◽

M V Fetisova ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Microdisk Lasers ◽

Coating Layers

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Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well lasers with wire-like active region by using p-type substrates

IEEE Photonics Technology Letters ◽

10.1109/68.157116 ◽

1992 ◽

Vol 4 (9) ◽

pp. 964-966 ◽

Cited By ~ 4

Author(s):

Y. Miyake ◽

H. Hirayama ◽

J.I. Shim ◽

S. Arai ◽

Y. Miyamoto

Keyword(s):

Active Region ◽

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Current Reduction ◽

P Type

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1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.

MRS Proceedings ◽

10.1557/proc-794-t7.2/z7.2 ◽

2003 ◽

Vol 794 ◽

Author(s):

V.M. Ustinov ◽

A.E. Zhukov ◽

A.R. Kovsh ◽

N.A. Maleev ◽

S.S. Mikhrin ◽

...

Keyword(s):

Quantum Dots ◽

Active Region ◽

Quantum Wells ◽

Gaas Substrate ◽

Room Temperature ◽

Internal Quantum Efficiency ◽

Characteristic Temperature ◽

Optical Loss ◽

Threshold Current ◽

Temperature Threshold

ABSTRACT1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to reduce significantly the density of dislocations propagating into the active layer from the lattice mismatched interface. 2 mm long InGaAs/InGaAlAs lasers with 10 planes of quantum dots in the active region showed threshold current density about 1.4 kA/cm2 with the external differential efficiency as high as 38%. Lasing wavelength depends on the optical loss being in the 1.44–1.49 micron range at room temperature. On increasing the temperature the wavelength reaches 1.515 micron at 85C while the threshold current characteristic temperature of 55–60K was estimated. High internal quantum efficiency (η>60%)and low internal losses (α=3–4 cm ) were realized. Maximum room temperature output power in pulsed regime as high as 5.5 W for 100 micron wide stripe was demonstrated. Using the same concept 1.3 micron InGaAs/InGaAlAs quantum well lasers were fabricated. The active region contained quantum wells with high (∼40%) indium content which was possible due to the intermediate InGaAs strain relaxation layer. 1 mm stripe lasers showed room temperature threshold current densities about 3.3 kA/cm (λ=1.29 micron) and 400 A/cm2 at 85K. Thus, the use of metamorphic InGaAs layers on GaAs substrate is a very promising approach for increasing the emission wavelength of GaAs based lasers.

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Optical Power Optimization of the Single Mode Vertical Cavity Surface Emitting Lasers by Two Oxide Layers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.6283 ◽

2011 ◽

Vol 383-390 ◽

pp. 6283-6288 ◽

Cited By ~ 1

Author(s):

Mohamad Yazdanypoor ◽

Asghar Gholami

Keyword(s):

Output Power ◽

Optical Power ◽

Single Mode ◽

Threshold Current ◽

Cavity Surface ◽

Oxide Layers ◽

High Frequency Response ◽

Vertical Cavity Surface ◽

Emitting Lasers ◽

Vertical Cavity

Influence of using two oxide layers in the both sides of active layer with different position and aperture size on Vertical Cavity Surface Emitting Laser (VCSEL) performance is analyzed showing effects on the output power, single mode operation and threshold current. In addition, for improving speed we use ion implant area along with thick oxide layer to minimize parasitic elements. As the result, the proposed design exhibits much better stability of the fundamental mode over a wider current range, much higher output power, lower threshold current, than the conventional one with a high frequency response.

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Использование микродисковых лазеров с квантовыми точками InAs/InGaAs для биодетектирования

Письма в журнал технической физики ◽

10.21883/pjtf.2019.23.48711.17994n ◽

2019 ◽

Vol 45 (23) ◽

pp. 10

Author(s):

М.В. Фетисова ◽

А.А. Корнев ◽

А.С. Букатин ◽

Н.А. Филатов ◽

И.Е. Елисеев ◽

...

Keyword(s):

Quantum Dots ◽

Monoclonal Antibodies ◽

Active Region ◽

Room Temperature ◽

Optical Pumping ◽

Threshold Power ◽

Gaas Substrates ◽

Microdisk Lasers ◽

Resonant Laser ◽

Secondary Antibodies

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.

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Submilliamp threshold current (0.62 mA at 0°C) and high output power (220 mW) 1.5 μm tensile strained InGaAs single quantum well lasers

Electronics Letters ◽

10.1049/el:19920524 ◽

1992 ◽

Vol 28 (9) ◽

pp. 829 ◽

Cited By ~ 39

Author(s):

P.J.A. Thijs ◽

J.J.M. Binsma ◽

L.F. Tiemeijer ◽

T. van Dongen

Keyword(s):

Quantum Well ◽

Output Power ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

High Output Power ◽

Single Quantum Well ◽

High Output

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λ-Scale Embedded Active Region Photonic Crystal (LEAP) Lasers for Optical Interconnects

Photonics ◽

10.3390/photonics6030082 ◽

2019 ◽

Vol 6 (3) ◽

pp. 82 ◽

Cited By ~ 3

Author(s):

Shinji Matsuo ◽

Koji Takeda

Keyword(s):

Photonic Crystal ◽

Active Region ◽

Power Consumption ◽

Quantum Wells ◽

Output Power ◽

Optical Interconnects ◽

Low Cost ◽

Threshold Current ◽

Active Volume ◽

Wavelength Scale

The distances optical interconnects must cover are decreasing as Internet traffic continues to increase. Since short-reach interconnect applications require many transmitters, cost and power consumption are significant issues. Directly modulated lasers with a wavelength-scale active volume will be used as optical interconnects on boards and chips in the future because a small active volume is expected to reduce power consumption. We developed electrically driven photonic crystal (PhC) lasers with a wavelength-scale cavity in which the active region is embedded in a line-defect waveguide of an InP-based PhC slab. We call this a λ-scale embedded active region PhC laser, or a LEAP laser. The device, whose active region has six quantum wells with 2.5 × 0.3 × 0.15 μm3 active volume, exhibits a threshold current of 28 μA and provides 10 fJ/bit of operating energy to 25 Gbit/s NRZ (non-return-to-zero) signals. The fiber-coupled output power is 6.9 μW. We also demonstrate heterogeneous integration of LEAP lasers on a SiO2/Si substrate for low-cost photonic integrated circuits (PICs). The threshold current is 40.5 μA and the output power is 4.4 μW with a bias current of 200 μA. These results indicate the feasibility of using PhC lasers in very-short-distance optical communications.

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InGaN/GaN/AlGaN-Based Leds and Laser Diodes

MRS Proceedings ◽

10.1557/proc-537-g1.1 ◽

1998 ◽

Vol 537 ◽

Cited By ~ 2

Author(s):

S. Nakamura ◽

M. Senoh ◽

S. Nagahama ◽

N. Iwasa ◽

T. Matushita ◽

...

Keyword(s):

Quantum Well ◽

Leakage Current ◽

Output Power ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Nonradiative Recombination ◽

Window Region ◽

Recombination Centers

AbstractInGaN quantum-well-structure blue LEDs were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The output power of both LEDs was as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that In composition fluctuation is not caused by threading dislocations (TDs), free carriers are captured by radiative recombination centers before they are captured by nonradiative recombination centers in InGaN, and that the dislocations form the leakage current pathway in InGaN. Red LED with an emission peak wavelength of 650 nm was fabricated by increasing the In composition and thickness of InGaN well layer. When the laser diodes (LD) was formed on the GaN layer above the SiO2 mask region, the threshold current density was as low as 3 kAcm-2. When the LD was formed on the window region, the threshold current density was as high as 6 to 9 kAcm-2. There is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region. InGaN multi-quantum-well (MQW) structure LDs grown on the ELOG substrate showed an output power as high as 420 mW under RT-CW operation. The longest lifetime of 9,800 hours at a constant output power of 2 mW was achieved. The InGaN MQW LDs were fabricated on a GaN substrate. The fundamental transverse mode was observed up to an output power of 80 mW.

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