scholarly journals Detector Part of the Station for the Research and Irradiation of Promising Products of Semiconductor Micro- and Nanoelectronics with High-Energy Ion Beams

2021 ◽  
Vol 18 (2) ◽  
pp. 217-221
Author(s):  
O. A. Vasil’ev ◽  
A. G. Voronin ◽  
D. E. Karmanov ◽  
I. M. Kovalev ◽  
A. A. Kurganov ◽  
...  
Keyword(s):  
1983 ◽  
Vol 23 ◽  
Author(s):  
G.J. Galvin ◽  
L.S. Hung ◽  
J.W. Mayer ◽  
M. Nastasi

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.


2006 ◽  
Vol 24 (4) ◽  
pp. 541-551 ◽  
Author(s):  
F. BECKER ◽  
A. HUG ◽  
P. FORCK ◽  
M. KULISH ◽  
P. NI ◽  
...  

An intense and focused heavy ion beam is a suitable tool to generate high energy density in matter. To compare results with simulations it is essential to know beam parameters as intensity, longitudinal, and transversal profile at the focal plane. Since the beam's energy deposition will melt and evaporate even tungsten, non-intercepting diagnostics are required. Therefore a capacitive pickup with high resolution in both time and space was designed, built and tested at the high temperature experimental area at GSI. Additionally a beam induced fluorescence monitor was investigated for the synchrotron's (SIS-18) energy-regime (60–750 AMeV) and successfully tested in a beam-transfer-line.


2019 ◽  
Vol 37 (03) ◽  
pp. 288-300 ◽  
Author(s):  
J. Badziak ◽  
J. Domański

AbstractThe multi-petawatt (PW) lasers currently being built in Europe as part of the Extreme Light Infrastructure (ELI) project will be capable of generating femtosecond light pulses of ultra-relativistic intensities (~1023–1024 W/cm2) that have been unattainable so far. Such laser pulses can be used for the production of high-energy ion beams with unique features that could be applied in various fields of scientific and technological research. In this paper, the prospect of producing ultra-intense (intensity ≥1020 W/cm2) ultra-short (pico- or femtosecond) high-energy ion beams using multi-PW lasers is outlined. The results of numerical studies on the acceleration of light (carbon) ions, medium-heavy (copper) ions and super-heavy (lead) ions driven by a femtosecond laser pulse of ultra-relativistic intensity, performed with the use of a multi-dimensional (2D3 V) particle-in-cell code, are presented, and the ion acceleration mechanisms and properties of the generated ion beams are discussed. It is shown that both in the case of light ions and in the case of medium-heavy and super-heavy ions, ultra-intense femtosecond multi-GeV ion beams with a beam intensity much higher (by a factor ~102) and ion pulse durations much shorter (by a factor ~104–105) than achievable presently in conventional radio frequency-driven accelerators can be produced at laser intensities of 1023 W/cm2 predicted for the ELI lasers. Such ion beams can open the door to new areas of research in high-energy density physics, nuclear physics and inertial confinement fusion.


2019 ◽  
Vol 30 (16) ◽  
pp. 15331-15338
Author(s):  
S. Molnar ◽  
R. Bohdan ◽  
Gy. Nagy ◽  
I. Rajta ◽  
L. Illes ◽  
...  

1996 ◽  
Vol 17 (2) ◽  
pp. 87-94 ◽  
Author(s):  
D Schardt ◽  
I Schall ◽  
H Geissel ◽  
H Irnich ◽  
G Kraft ◽  
...  

Micron ◽  
1999 ◽  
Vol 30 (3) ◽  
pp. 245-254 ◽  
Author(s):  
L.P Biró ◽  
J Gyulai ◽  
G.I Márk ◽  
Cs.S Daróczi
Keyword(s):  

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