Reduction of nitrogen oxide by ammonia. Oxidation state of V2O5/Al2O3 catalysts and reaction mechanism

1990 ◽  
Vol 55 (10) ◽  
pp. 2390-2394 ◽  
Author(s):  
Milan Čížek

When the (NO + NH3 + O2) reaction is carried out over V2O5/Al2O3, the catalysts are partially reduced, and prereduced catalysts are oxidized by the reaction mixture at a slower rate than by an O2 + N2 mixture. The degree of catalyst reduction in the (NO + NH3 + O2) reaction depends on the gas phase composition and particularly on the vanadium loading of the catalyst. The initial oxidation state of catalyst has an effect on the catalyst activity for the reaction. Rate-determining reduction and oxidation steps of the so-called reduction-oxidation mechanism are proposed on the basis of a comparison of the reduction and oxidation of the catalyst by the reaction components.


1990 ◽  
Vol 55 (7) ◽  
pp. 1678-1685
Author(s):  
Vladimír Stuchlý ◽  
Karel Klusáček

Kinetics of CO methanation on a commercial Ni/SiO2 catalyst was evaluated at atmospheric pressure, between 528 and 550 K and for hydrogen to carbon monoxide molar ratios ranging from 3 : 1 to 200 : 1. The effect of reaction products on the reaction rate was also examined. Below 550 K, only methane was selectively formed. Above this temperature, the formation of carbon dioxide was also observed. The experimental data could be described by two modified Langmuir-Hinshelwood kinetic models, based on hydrogenation of surface CO by molecularly or by dissociatively adsorbed hydrogen in the rate-determining step. Water reversibly lowered catalyst activity and its effect was more pronounced at higher temperature.



1999 ◽  
Vol 567 ◽  
Author(s):  
H.-J. Müssig ◽  
J. Dabrowski ◽  
S. Hinrich

ABSTRACTWe report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initiocalculations help elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence was found for bond geometries resulting in the quasi-epitaxial growth of a chemisorption layer on the substrate at elevated temperatures (600°C). In contrast to the first stages of Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113).





1992 ◽  
Vol 282 ◽  
Author(s):  
Michael R. Zachariah ◽  
Wing Tsang

ABSTRACTAb initio molecular orbital calculations coupled to RRKM reaction rate theory have been conducted on some important reactions involved in the oxidation of silane in a high-temperature/high H2O environment. The results indicate thatH2O acts as an oxygen donor to SiH2 to form H3SiOH or SiH2O. Subsequent reactions involve the formation of (HSiOOH, H2Si(OH)2,:Si(OH)2 or SiO). In turn SiO polymerizes into planar rings, without an activation energy barrier. A list of calculated thermochemical data are also presented for a number of equilibrium species.



2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.



2008 ◽  
Vol 112 (48) ◽  
pp. 19102-19112 ◽  
Author(s):  
K. Bhattacharyya ◽  
S. Varma ◽  
A. K. Tripathi ◽  
S. R. Bharadwaj ◽  
A. K. Tyagi


1990 ◽  
Vol 95 (D9) ◽  
pp. 13981 ◽  
Author(s):  
Gaunlin Shen ◽  
Masako Suto ◽  
L. C. Lee


2015 ◽  
Vol 48 (4) ◽  
pp. 045204 ◽  
Author(s):  
Pavel Bakule ◽  
Oleksandr Sukhorukov ◽  
Katsuhiko Ishida ◽  
Francis Pratt ◽  
Donald Fleming ◽  
...  




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