The estimation of fitness in iteroparous species during population replacement experiments

A model is proposed for a species with overlapping generations near equilibrium. This model incorporates a standard strain in competition with a strain carrying compound chromosomes. A method of estimating the relative fitness of the compounds is described and tested by Monte Carlo simulation. The results show that the method is robust and can be used over a variety of life history patterns for estimating fitness and, with less precision, generation time.

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Generation time, life history and the substitution rate of neutral mutations

Biology Letters ◽

10.1098/rsbl.2014.0801 ◽

2014 ◽

Vol 10 (11) ◽

pp. 20140801 ◽

Cited By ~ 16

Author(s):

Jussi Lehtonen ◽

Robert Lanfear

Keyword(s):

Life History ◽

Generation Time ◽

Life Histories ◽

Life History Traits ◽

Theoretical Understanding ◽

Substitution Rates ◽

Demographic Theory ◽

Full Life ◽

Iteroparous Species ◽

Neutral Mutations

Our understanding of molecular evolution is hampered by a lack of quantitative predictions about how life-history (LH) traits should correlate with substitution rates. Comparative studies have shown that neutral substitution rates vary substantially between species, and evidence shows that much of this diversity is associated with variation in LH traits. However, while these studies often agree, some unexplained and contradictory results have emerged. Explaining these results is difficult without a clear theoretical understanding of the problem. In this study, we derive predictions for the relationships between LH traits and substitution rates in iteroparous species by using demographic theory to relate commonly measured life-history traits to genetic generation time, and by implication to neutral substitution rates. This provides some surprisingly simple explanations for otherwise confusing patterns, such as the association between fecundity and substitution rates. The same framework can be applied to more complex life histories if full life-tables are available.

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Electron Scattering in Solids

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133618 ◽

1990 ◽

Vol 48 (2) ◽

pp. 4-5

Author(s):

Ryuichi Shimizu ◽

Ze-Jun Ding

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Angular Distribution ◽

Elastic Scattering ◽

Electron Scattering ◽

Cross Sections ◽

Expansion Method ◽

Electron Excitation ◽

Partial Wave Expansion ◽

Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

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Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134922 ◽

1990 ◽

Vol 48 (2) ◽

pp. 264-265

Author(s):

D. R. Liu ◽

S. S. Shinozaki ◽

R. J. Baird

Keyword(s):

Thin Film ◽

Thin Films ◽

Monte Carlo Simulation ◽

Monte Carlo ◽

Compound Semiconductors ◽

Energy Dispersive Analysis ◽

X Ray ◽

Metastable Alloys ◽

Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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