ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2797-2804 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Line Broadening ◽  
Additional Information ◽  
Boron Doped ◽  
Doped Silicon ◽  
Time Part ◽  
Width Measurements ◽  
First Time

In boron-doped silicon, the excitation of bound holes from the acceptor ground state to the excited states leads to an infrared absorption-line spectrum. In a recent half-width study of the boron absorption lines, Colbow (1963) separated the various line-broadening contributions for the first time. Part of Colbow's half-widths is now found to be due to external strains introduced by the sample mounting. New half-width measurements of "strain-free" mounted boron-doped silicon are presented, Colbow's work is corrected, and additional information regarding the various broadening contributions is given.

TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1436-1442 ◽  
Author(s):  
Konrad Colbow ◽  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

scholarly journals INFRARED ABSORPTION LINES IN BORON-DOPED SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1801-1822 ◽  
Author(s):  
Konrad Colbow
Keyword(s):  
Experimental Data ◽  
Excited States ◽  
Ground State ◽  
Half Width ◽  
Stark Broadening ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance ◽  
Internal Strains

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground state to excited states. This leads to a line spectrum. Because of a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave a misleading picture of the low-temperature half-width, the temperature dependence of this half-width, and the onset of concentration broadening at low temperatures.New experimental data are presented and explained by introducing the mechanism of statistical Stark broadening due to ionized impurities, and by modifying Baltensperger's (1953) theory for concentration broadening. At low impurity concentration the width is attributed to phonon broadening (Barrie and Nishikawa 1963) and internal strains (Kohn 1957).

EFFECTS OF EXTERNAL AND INTERNAL ELECTRIC FIELDS ON THE BORON ACCEPTOR STATES IN SILICON

1967 ◽  
Vol 45 (8) ◽  
pp. 2695-2718 ◽  
Author(s):  
J. J. White
Keyword(s):  
Absorption Line ◽  
Excited States ◽  
Electric Fields ◽  
Stark Effect ◽  
Absorption Lines ◽  
Stark Broadening ◽  
Boron Doped ◽  
Stark Effects ◽  
Boron Acceptor ◽  
Neutral Acceptor

Effects of various electrical perturbations on the boron acceptor states in silicon were studied using low-temperature absorption-line measurements.A uniform external electric field was applied to compensated boron-doped silicon and the "Stark effect" on the boron acceptor absorption lines was observed. The Stark shifts of the excited states were quadratic in the applied field. The Stark broadening of the acceptor absorption lines was attributed to an unresolved partial removal of degeneracy of the excited states. The internal Coulomb fields of ionized impurities also perturb neutral acceptor transitions, resulting in (a) "ionized impurity broadening" of the absorption lines by the screened Coulomb fields of thermally ionized impurities in uncompensated Si(B) silicon at T > 50 °K and (b) "compensation effects" on the absorption lines by the unscreened Coulomb fields of compensationally ionized impurities in Si(B, P) silicon at 4 °K. Observations of these two internal Coulomb held effects are related to the external-field Stark effects. The theories of ionized impurity broadening are discussed briefly and the observed properties of a new absorption line due to compensation are reported.

Half-width of infrared absorption lines in boron-doped silicon

1963 ◽  
Vol 5 (2) ◽  
pp. 98-99 ◽  
Author(s):  
K. Colbow ◽  
R. Barrie
Keyword(s):  
Infrared Absorption ◽  
Half Width ◽  
Absorption Lines ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Infrared Absorption Study of Zinc-Doped Silicon.

1989 ◽  
Vol 163 ◽  
Author(s):  
E. Merk ◽  
J. Heyman ◽  
E. E. Haller
Keyword(s):  
Excited States ◽  
Infrared Absorption ◽  
Absorption Study ◽  
Rydberg Series ◽  
Cell Potential ◽  
Group Iii ◽  
Mass Approximation ◽  
Doped Silicon ◽  
First Time ◽  
Hole Transition

AbstractWe report high resolution infrared absorption spectra associated with the deep zinc acceptor in silicon. The optical transitions between ground and bound excited “p-like” states of the neutral helium-like double acceptor Zn0 center have been observed for the first time. The absorption cross section for the hole transition is found to be very small, of the order of 10-17 cm2. Energy spacings of the P3/2 Rydberg series are very similar to the spacings of the group-III acceptors, suggesting that, in spite of the large ground state binding energy, effective mass approximation still applies to the bound excited states. This represents one more case where the strong central cell potential does not significantly disturb the neutral helium-like bound excited states. Similar observations have been made for the less deep neutral double acceptor Be, and for the chalcogens donors S, Se and Te.The optical ionization energy of Zn0/- has been determined to be 2575 cm-1 (319 meV).Two additional sets of absorption lines related to zinc have been observed at 2130 cm-1 and 2758 cm-1. Their origin will be discussed.

Combined High Resolution UV and Microwave Results: Structure of the Benzonitrile•Water Complex

1997 ◽  
Vol 52 (8-9) ◽  
pp. 655-664 ◽  
Author(s):  
R. M. Helm ◽  
H.-P. Vogel ◽  
H. J. Neusser ◽  
V. Storm ◽  
D. Consalvo ◽  
...  
Keyword(s):  
High Resolution ◽  
Uv Spectra ◽  
Line Broadening ◽  
Additional Information ◽  
Two Photon ◽  
Structure Changes ◽  
Quadrupole Coupling ◽  
Photon Ionization ◽  
Nuclear Quadrupole ◽  
First Time

Abstract High resolution ultraviolet (UV) and molecular beam Fourier transform microwave (MB FTMW) spectroscopy of the benzonitrile·water (BZNW) cluster were performed to measure cluster structures in the S0 and S1 states. The MW experiments provide additional information on the structure and the 14N-nuclear quadrupole coupling in the ground state So, the UV experiments on the dynamics in Si. The rotationally resolved sub-Doppler UV spectra of BZNW were measured by mass-selective resonance-enhanced two-photon ionization. For the first time this UV technique has been applied to hydrogen-bonded clusters. From the UV spectra the rotational constants are obtained by Correlation Automated Rotational Fitting. The MW spectra were analyzed with the model of a centrifugally distorted rotor including nuclear quadrupole coupling. A r0 -fit of the water position within the cluster is performed. The water is found to be located with its oxygen nearly in the plane of benzonitrile (BZN). For S0 (S1), the distance of the oxygen to the ortho hydrogen is r0 = 2.477(4) Å (2.457(2) Å) and the angle to the ortho carbon-hydrogen bond 143.34(2)° (141.91(3)°). The structure differences in S1 and S0 can be explained by the structure changes of the BZN molecule. A line broadening, which points to a faster decay in Si upon clustering with the polar solvent, is observed for the BZNW cluster.

THE TEMPERATURE DEPENDENCE OF THE HALF-WIDTHS OF INTERNAL ABSORPTION LINES IN BORON-DOPED SILICON

1967 ◽  
Vol 45 (9) ◽  
pp. 2879-2888 ◽  
Author(s):  
R. R. Parsons ◽  
J. W. Bichard
Keyword(s):  
Ground State ◽  
Phonon Coupling ◽  
Boron Doped ◽  
Electron Phonon Coupling ◽  
Doped Silicon ◽  
Internal States ◽  
Phonon Lifetime ◽  
Width Measurements ◽  
Lifetime Effects ◽  
Internal Absorption

For boron-doped silicon at temperatures less than 60 °K, half-width measurements for those absorption peaks corresponding to transitions from the ground state to the 2P′ and 3P′ internal states are presented. These half-widths are attributed to concentration and electron–phonon lifetime effects. The major contribution to the phonon broadening appears to be due to electron–phonon coupling of the internal states to the P3/2 Bloch states.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells
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