Semi-automatic, volume production of silicon solar cells

1987 ◽  
Vol 65 (8) ◽  
pp. 892-896 ◽  
Author(s):  
R. E. Thomas ◽  
C. E. Norman ◽  
S. Varma ◽  
G. Schwartz ◽  
E. M. Absi

A low-cost, high-yield technology for producing single-crystal silicon solar cells at high volumes, and suitable for export to developing countries, is described. The process begins with 100 mm diameter as-sawn single-crystal p-type wafers with one primary flat. Processing steps include etching and surface texturization, gaseous-source diffusion, plasma etching, and contacting via screen printing. The necessary adaptations of such standard processes as diffusion and plasma etching to solar-cell production are detailed. New process developments include a high-throughput surface-texturization technique, and automatic printing and firing of cell contacts.The technology, coupled with automated equipment developed specifically for the purpose, results in solar cells with an average efficiency greater than 12%, a yield exceeding 95%, a tight statistical spread on parameters, and a wide tolerance to starting substrates (including the first 100 mm diameter wafers made in Canada). It is shown that with minor modifications, the present single shift 500 kWp (kilowatt peak) per year capacity technology can be readily expanded to 1 MWp per year, adapted to square and polycrystalline substrates, and efficiencies increased above 13%.

1983 ◽  
Vol 29 ◽  
Author(s):  
T. Arikado ◽  
M. Sekine ◽  
H. Okano ◽  
Y. Horiike

ABSTRACTSingle-crystal Si etching characteristics using an excimer laser (308 nm, XeCℓ) in the Cℓ2 gas have been studied. In lightly doped n-type and p-type Si, the etch rate of (100) is higher than that of (111), thus the (111) sidewall appears clearly for the irradiation to (100), while both orientations show almost the same etch rates in n+-doped Si. The n-type Si is etched spontaneously even by photo-dissociated Cℓ radicals generated in the gas phase, but no p-type Si etching occurs without direct irradiation. In addition, both types of etch rate-dependence on sheet resistance demonstrate that the number of electrons in the conduction band plays an essential role in the Si etching. This fact supports the field-assisted mechanism in the plasma etching proposed by Winters.


2007 ◽  
Vol 2007 ◽  
pp. 1-9 ◽  
Author(s):  
Evan Franklin ◽  
Vernie Everett ◽  
Andrew Blakers ◽  
Klaus Weber

Sliver cells are thin, single-crystal silicon solar cells fabricated using standard fabrication technology. Sliver modules, composed of several thousand individual Sliver cells, can be efficient, low-cost, bifacial, transparent, flexible, shadow tolerant, and lightweight. Compared with current PV technology, mature Sliver technology will need 10% of the pure silicon and fewer than 5% of the wafer starts per MW of factory output. This paper deals with two distinct challenges related to Sliver cell and Sliver module production: providing a mature and robust Sliver cell fabrication method which produces a high yield of highly efficient Sliver cells, and which is suitable for transfer to industry; and, handling, electrically interconnecting, and encapsulating billions of sliver cells at low cost. Sliver cells with efficiencies of 20% have been fabricated at ANU using a reliable, optimised processing sequence, while low-cost encapsulation methods have been demonstrated using a submodule technique.


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