Doping glow-discharge amorphous silicon by metal coevaporation
Keyword(s):
We report here on the further development of a new technique for doping plasma-deposited amorphous silicon by thermal evaporation of metal into the plasma from which the film is grown. We show that the de bias applied to the substrate has an important effect on the incorporation of the metal into the film, and on the doping efficiency. We also report on our efforts to monitor and control the evaporation by mass spectroscopy.
1973 ◽
Vol 10
(1)
◽
pp. 263-263
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Keyword(s):
1973 ◽
Vol 10
(3)
◽
pp. 450-452
◽
Keyword(s):