Doping glow-discharge amorphous silicon by metal coevaporation

1987 ◽  
Vol 65 (8) ◽  
pp. 1027-1029 ◽  
Author(s):  
G. Perluzzo ◽  
C. Aktik ◽  
J. F. Currie ◽  
S. Poulin-Dandurand ◽  
A. Yelon ◽  
...  

We report here on the further development of a new technique for doping plasma-deposited amorphous silicon by thermal evaporation of metal into the plasma from which the film is grown. We show that the de bias applied to the substrate has an important effect on the incorporation of the metal into the film, and on the doping efficiency. We also report on our efforts to monitor and control the evaporation by mass spectroscopy.

Author(s):  
Ying Song ◽  
Hengyu Wang ◽  
Min Zou

This paper reports a new technique of producing hydrophobic surfaces with WCA as high as 147°. This technique consists of first generating nano-textures on a silicon surface via aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) and then applying perfluoropolyether (PFPE) on the nano-textured surface (NTS). The resulting PFPE-modified NTS showed significant improvement on both surface hydrophobicity and tribological performances compared to a PFPE-modified smooth silicon surface.


1995 ◽  
Vol 377 ◽  
Author(s):  
A. Banerjee ◽  
X. Xu ◽  
J. Yang ◽  
S. Guha

ABSTRACTA new technique to diagnose fill factor losses occurring in single-junction amorphous silicon (a-Si) alloy based nip solar cells has been explored. The method consists of the measurements of the fill factor of the device under blue and red light illumination and the current-collection loss obtained from the ratio of the quantum efficiency versus wavelength spectra at zero and reverse bias. Normally, the losses are higher at low and high wavelengths. It has been observed that there is a strong correlation between the values of the blue and red fill factors and the current collection losses at the pli interfaces and the bulk of the i-layer, respectively. The losses have been attributed to back diffusion of carriers at the pli interface and to the bulk of the i-Layer. There is a sensitive dependence between these losses and the texture of the substrate: textured substrates lead to higher losses compared to specular substrates. The technique has been used successfully to enhance the values of the red, blue, and AM 1.5 fill factors of both a-Si and amorphous silicon-germanium (a-SiGe) alloy single-junction cells on back reflectors by the optimization of device fabrication parameters. The optimized cells on textured back reflectors exhibit reduced losses. The paper presents an analysis of the experimental results.


2001 ◽  
Vol 16 (1) ◽  
pp. 43-48 ◽  
Author(s):  
Peter Schneede ◽  
Dominic Frimberger ◽  
Dirk Zaak ◽  
Alfons Hofstetter

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