A GLOBAL APPROACH TO THE NOISE AND SMALL-SIGNAL CHARACTERIZATION OF MICROWAVE FIELD-EFFECT TRANSISTORS

Noise in Physical Systems and 1/F Fluctuations ◽

10.1142/9789812811165_0064 ◽

2001 ◽

Author(s):

A. CADDEMI ◽

G. MARTINES

Keyword(s):

Field Effect ◽

Microwave Field ◽

Field Effect Transistors ◽

Small Signal ◽

Global Approach ◽

Signal Characterization

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Improved Electrical Measurement Techniques For The Characterization Of Microwave Field Effect Transistors

10.1117/12.940968 ◽

1988 ◽

Author(s):

Steven E. Rosenbaum ◽

Octavius Pitzalis ◽

Joe M. Marzan

Keyword(s):

Field Effect ◽

Microwave Field ◽

Field Effect Transistors ◽

Measurement Techniques ◽

Electrical Measurement

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Large-signal characterization of dual-gate field effect transistors using load-pull measurements

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.216455 ◽

1993 ◽

Vol 41 (2) ◽

pp. 183-189 ◽

Author(s):

D.M. Drury ◽

D.C. Zimmermann ◽

W.A. Davis

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Large Signal ◽

Dual Gate ◽

Signal Characterization ◽

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Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578010 ◽

2016 ◽

Author(s):

Marolop Simanullang ◽

Gde B. M. Wisna ◽

Wei Cao ◽

Koichi Usami ◽

Kaustav Banerjee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108079 ◽

2021 ◽

pp. 108079

Author(s):

Dong-Hyeok Son ◽

Terirama Thingujam ◽

Quan Dai ◽

Jeong-Gil Kim ◽

Sorin Cristoloveanu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

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Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Reinvestigation and extension of the steady‐state Nyquist theorem for multi‐terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors

Journal of Applied Physics ◽

10.1063/1.360936 ◽

1996 ◽

Vol 79 (1) ◽

pp. 228-241 ◽

Author(s):

J. B. Lee ◽

H. S. Min ◽

Y. J. Park

Keyword(s):

Steady State ◽

Field Effect ◽

Microwave Field ◽

Noise Figure ◽

Field Effect Transistors ◽

Semiconductor Devices ◽

Minimum Noise ◽

Minimum Noise Figure

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Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Applied Physics Letters ◽

10.1063/1.3696045 ◽

2012 ◽

Vol 100 (12) ◽

pp. 123104 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

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Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation

Solid-State Electronics ◽

10.1016/j.sse.2021.108139 ◽

2021 ◽

pp. 108139

Author(s):

Han Bin Yoo ◽

Haesung Kim ◽

Ji Hee Ryu ◽

Jingyu Park ◽

Jong-Ho Bae ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Optical Excitation

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Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal–oxide–semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1640659 ◽

2004 ◽

Vol 22 (1) ◽

pp. 327 ◽

Author(s):

Erika Duda ◽

Shifeng Lu ◽

Chun-Li Liu ◽

Zhixiong Jiang ◽

Joe Lerma ◽

...

Keyword(s):

Mass Spectrometry ◽

Metal Oxide ◽

Field Effect ◽

Secondary Ion Mass Spectrometry ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Silicon ◽

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