THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS
2009 ◽
Vol 19
(01)
◽
pp. 101-106
Keyword(s):
Ka Band
◽
BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T -gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka -band through W -bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.