THE FIRST 70NM 6-INCH GaAs PHEMT MMIC PROCESS

2009 ◽  
Vol 19 (01) ◽  
pp. 101-106
Author(s):  
H. KARIMY ◽  
L. GUNTER ◽  
D. DUGAS ◽  
P.C. CHAO ◽  
W. KONG ◽  
...  

BAE Systems has developed a high power, high yield 70nm 6" 2-mil PHEMT MMIC process for frequencies up to 100GHz. Utilizing T -gate technology and 2-mil substrates, we have created a millimeter wave technology that produces excellent performance from Ka -band through W -bands. The device DC and RF characteristics have excellent uniformity across the wafer. In this paper, we report the 70nm device fabrication on 6-inch wafers and compare the DC and RF characteristics with its mature 0.1µm counterpart.

2019 ◽  
Vol 26 (1) ◽  
pp. 013101 ◽  
Author(s):  
Haitao Wang ◽  
Jun Zhang ◽  
Fangchao Dang ◽  
Baoliang Qian

2011 ◽  
Vol 18 (5) ◽  
pp. 053101 ◽  
Author(s):  
Jun Zhu ◽  
Ting Shu ◽  
Jun Zhang ◽  
Guolin Li ◽  
Zehai Zhang ◽  
...  

2015 ◽  
Vol E98.C (2) ◽  
pp. 156-161
Author(s):  
Hidenori YUKAWA ◽  
Koji YOSHIDA ◽  
Tomohiro MIZUNO ◽  
Tetsu OWADA ◽  
Moriyasu MIYAZAKI
Keyword(s):  
Ka Band ◽  
Low Pass ◽  

Vacuum ◽  
2021 ◽  
pp. 110377
Author(s):  
M. Behtouei ◽  
B. Spataro ◽  
F. Di Paolo ◽  
A. Leggieri

2021 ◽  
Vol 118 (2) ◽  
pp. 022407
Author(s):  
Hideyuki Takahashi ◽  
Yuya Ishikawa ◽  
Tsubasa Okamoto ◽  
Daiki Hachiya ◽  
Kazuki Dono ◽  
...  

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