TWO-DIMENSIONAL HOLES IN GaAs HIGFETs: FABRICATION METHODS AND TRANSPORT MEASUREMENTS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1219-1227 ◽  
Author(s):  
JIAN HUANG ◽  
D. S. NOVIKOV ◽  
D. C. TSUI ◽  
L. N. PFEIFFER ◽  
K. W. WEST

We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in the modulation-doped samples. We established a process that eliminates the well-known gate leakage problem. The hole density in our devices can be continuously tuned down to a record low value of 7 × 108 cm -2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a non-activated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly-interacting regime.

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.


2021 ◽  
Author(s):  
Guo-Dong Wu ◽  
Hai-Lun Zhou ◽  
Zhi-Hua Fu ◽  
Wen-Hua Li ◽  
Jing-Wei Xiu ◽  
...  

2021 ◽  
pp. 2103982
Author(s):  
Jian‐Min Yan ◽  
Jing‐Shi Ying ◽  
Ming‐Yuan Yan ◽  
Zhao‐Cai Wang ◽  
Shuang‐Shuang Li ◽  
...  

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
Ryan J. Wu ◽  
Sagar Udyavara ◽  
Rui Ma ◽  
Yan Wang ◽  
Manish Chhowalla ◽  
...  

Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...


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