scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

scholarly journals First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials

Nanoscale ◽  
2017 ◽  
Vol 9 (48) ◽  
pp. 19390-19397 ◽  
Author(s):  
E. G. Marin ◽  
D. Marian ◽  
G. Iannaccone ◽  
G. Fiori
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
One Dimensional ◽  
Two Dimensional Materials ◽  
Tunnel Fets

We explore nanoribbons from topological two-dimensional stanene as a channel material in tunnel field effect transistors, opening the possibility of building pure one-dimensional channel devices.

scholarly journals Ambipolar transport compact models for two-dimensional materials based field-effect transistors

2021 ◽  
Vol 26 (5) ◽  
pp. 574-591
Author(s):  
Zhaoyi Yan ◽  
Guangyang Gou ◽  
Jie Ren ◽  
Fan Wu ◽  
Yang Shen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
Compact Models ◽  
Ambipolar Transport

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

2021 ◽  
Vol 3 (9) ◽  
pp. 4126-4134
Author(s):  
Aroop K. Behera ◽  
Charles Thomas Harris ◽  
Douglas V. Pete ◽  
Collin J. Delker ◽  
Per Erik Vullum ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Electrical Contacts ◽  
Two Dimensional ◽  
One Dimensional ◽  
Heterostructure Field Effect Transistors

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

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