AB-INITIO CALCULATIONS OF ELECTRONIC PROPERTIES OF InP AND GaP

2013 ◽  
Vol 27 (15) ◽  
pp. 1362013
Author(s):  
Y. MALOZOVSKY ◽  
L. FRANKLIN ◽  
E. C. EKUMA ◽  
G. L. ZHAO ◽  
D. BAGAYOKO
Keyword(s):  
Ab Initio ◽  
Electronic Properties ◽  
Gallium Phosphide ◽  
Local Density ◽  
Basis Set ◽  
High Symmetry ◽  
Optimal Basis ◽  
Direct Band ◽  
Experimental Values ◽  
Experimental Findings

We present results from ab-initio, self-consistent local density approximation (LDA) calculations of electronic and related properties of zinc blende indium phosphide (InP) and gallium phosphide (GaP) . We employed a LDA potential and implemented the linear combination of atomic orbitals (LCAO) formalism. This implementation followed the Bagayoko, Zhao and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW–EF). This method searches for the optimal basis set that yields the minima of the occupied energies. This search entails increases of the size of the basis set and the related modifications of angular symmetry and of radial orbitals. Our calculated, direct band gap of 1.398 eV (1.40 eV), at the Γ point, is in excellent agreement with experimental values, for InP , and our preliminary result for the indirect gap of GaP is 2.135 eV, from the Γ to X high symmetry points. We have also calculated electron and hole effective masses for both InP and GaP . These calculated properties also agree with experimental findings. We conclude that the BZW–EF method could be employed in calculations of electronic properties of high-Tc superconducting materials to explain their complex properties.

Ab-initio Calculations of Electronic, Transport, and Bulk Properties of cubic Boron Nitride (zb-BN)

2015 ◽  
Vol 9 (1) ◽  
pp. 2277-2286 ◽  
Author(s):  
Anthony Duane Stewart
Keyword(s):  
Boron Nitride ◽  
Ab Initio ◽  
Excellent Agreement ◽  
Local Density ◽  
Cubic Boron Nitride ◽  
Basis Set ◽  
Optimal Basis ◽  
Valence Bands ◽  
Indirect Band Gap ◽  
Experimental Values

We present results from ab-initio, self consistent, local density approximation (LDA) calculations of electronic and related properties of cubic boron nitride (zb-BN).  We employed the Ceperley and Alder LDA potential and the linear combination of atomic orbitals (LCAO) formalism in our non-relativistic computations.  We solved the system of LDA equations self-consistently, through the implementation of the LCAO formalism, following the Bagayoko, Zhao, and Williams (BZW) method as enhanced by Ekuma and Franklin (BZW-EF).  The BZW-EF method includes a methodical search for the optimal basis set that yields the absolute minima of the occupied energies.  This search entails increasing the size of the basis set and the related modifications of angular symmetry and of radial orbitals.  Our calculated, indirect band gap of 6.48 eV, from the Γ to the Χ points, and bulk modulus of 375 GPa are in excellent agreement with corresponding experimental values at room temperature (RT).  The calculated widths of the lowest valance band and that of the entire valence bands of 5.65 eV and 20.26 eV are in excellent agreement with the measured values of 5.5 eV and 20 eV, respectively.  We have also calculated electron and hole effective masses for zb-BN, and the total (DOS) and partial (pDOS) densities of states.   

scholarly journals First principles calculations on theoretical band gap improvement of IIIA-VA zinc-blende semiconductor InAs

2020 ◽  
Vol 31 (12) ◽  
pp. 2050178
Author(s):  
Waqas Mahmood ◽  
Arfan Bukhtiar ◽  
Muhammad Haroon ◽  
Bing Dong
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Local Density ◽  
Lattice Parameter ◽  
First Principles Calculations ◽  
Functional Theory ◽  
Zinc Blende ◽  
Valence States ◽  
Direct Band ◽  
Experimental Findings

The structural, electronic, dielectric and vibrational properties of zinc-blende (ZB) InAs were studied within the framework of density functional theory (DFT) by employing local density approximation and norm-conserving pseudopotentials. The optimal lattice parameter, direct band gap, static dielectric constant, phonon frequencies and Born effective charges calculated by treating In-4d electrons as valence states are in satisfactory agreement with other reported theoretical and experimental findings. The calculated band gap is reasonably accurate and improved in comparison to other findings. This work will be useful for more computational studies related to semiconductor devices.

AB-INITIO MOLECULAR DYNAMICS IN THE FULL-POTENTIAL LMTO METHOD: DERIVATION OF A PRACTICAL FORCE THEOREM

1993 ◽  
Vol 07 (01n03) ◽  
pp. 262-265 ◽  
Author(s):  
M. METHFESSEL ◽  
M. VAN SCHILFGAARDE
Keyword(s):  
Molecular Dynamics ◽  
Ab Initio ◽  
Local Density ◽  
Basis Set ◽  
Ab Initio Molecular Dynamics ◽  
Basis Sets ◽  
Full Potential ◽  
Major Advance ◽  
First Results ◽  
Lmto Method

A major advance in electronic structure calculations was the combination of local-density techniques with molecular dynamics by Car and Parrinello seven years ago. Unfortunately, application of the Car-Parrinello scheme has been limited essentially to sp materials because only in the plane-wave pseudopotential method forces are trivial to calculate. We present a systematic approach to derive force theorems with desired characteristics within complicated basis sets, which are applicable to all elements of the periodic table equally well. Application to the LMTO basis set yields an accurate force theorem, quite distinct from the Hellman-Feynman form, which is exceptionally insensitive to errors in the trial density. The forces were implemented in a new full-potential LMTO method which is suited to arbitrary geometries. First results for ab-initio molecular dynamics and simulated annealing runs are shown for some random small molecules and small clusters of silver atoms.

Computational Procedure of Lattice Energy Using the Ab Initio MO Method

2003 ◽  
Vol 02 (02) ◽  
pp. 233-244 ◽  
Author(s):  
Kanade Nagayoshi ◽  
Tohru Ikeda ◽  
Kazuo Kitaura ◽  
Shigeru Nagase
Keyword(s):  
Ab Initio ◽  
Molecular Crystals ◽  
Lattice Energy ◽  
Computational Procedure ◽  
Basis Set ◽  
Full Account ◽  
Packing Structure ◽  
Donor Acceptor ◽  
Ab Initio Mo ◽  
Experimental Values

Recently, we have proposed a computational procedure for calculations of lattice energies of molecular crystals using the ab initio MO method. This procedure does not use potential functions and is applicable to a variety of molecular crystals. The procedure has been successfully applied to calculation of packing structure of electron donor-acceptor complex, H3N–BF3, and hydrogen bonding crystal, CH3OH. In this work, we present a full account of the computational procedure. This method is applied to the packing structure calculations of hydrocarbon crystals, C2H2, C2H4 and C6H6. The lattice parameters optimized at the MP2/6-311++G** level are in good agreement with the experimental values. The basis set dependence of the lattice constants is also discussed for several crystals.

Ab Initio Calculations of the Molecular Structures and the Electronic Properties of Sulfur-containing Compounds: III. Thioacrolein (CH2=CH–CH=S) and Thioglyoxal (S = CH–CH=S)

1982 ◽  
Vol 37 (2) ◽  
pp. 125-128
Author(s):  
Tae-Kyu Ha ◽  
M. T. Nguyen ◽  
L. Vanquickenborne
Keyword(s):  
Ab Initio Calculations ◽  
Ab Initio ◽  
Electronic Properties ◽  
Gradient Method ◽  
Molecular Structures ◽  
Basis Set ◽  
Double Zeta ◽  
Scf Calculations ◽  
Sulfur Containing ◽  
Sulfur Containing Compounds

Abstract Results of ab initio SCF calculations on thioacrolein (CH2=CH-CH=S) and thioglyoxal (S=CH-CH=S) are reported. The geometries are optimized by the analytical gradient method using the double zeta (DZ) basis set. The trans conformers of these molecules are calculated to be more stable than the cis conformer by 2.06 and 4.31 kcal/mol, respectively.

The simplified ab initio method calculation of linear polarizability

1973 ◽  
Vol 26 (5) ◽  
pp. 921 ◽  
Author(s):  
RD Brown ◽  
GR Williams
Keyword(s):  
Ab Initio ◽  
Small Molecules ◽  
Basis Set ◽  
Basis Sets ◽  
Orbital Method ◽  
Polarizability Anisotropy ◽  
Minimal Basis ◽  
Hartree Fock ◽  
Numerical Performance ◽  
Experimental Values

The simplified ab-initio molecular-orbital method described previously is particularly suited to the calculation of polarizabilities by the non-perturbative coupled Hartree-Fock technique. Trial calculations on CO and HF, for which comparison with corresponding ab-initio calculations is possible, show that the method gives an adequate numerical performance. Minimal basis set calculations in general tend to give values that are considerably too low because of inadequate flexibility of the basis and this is the origin of the large discrepancy between theory and experiment, especially for small molecules. ��� Results are also reported for N2O and O3. For these larger systems the SAI results with minimal basis sets are noticeably nearer experimental values. The polarizability anisotropy for N2O is particularly well reproduced by the SAI method. �

STRUCTURAL PHASE TRANSITION, ELASTIC AND ELECTRONIC PROPERTIES OF CuXSe2(X = In, Ga) CHALCOPYRITE

2012 ◽  
Vol 19 (02) ◽  
pp. 1250021 ◽  
Author(s):  
T. BOUGUETAIA ◽  
B. ABIDRI ◽  
B. BENBAHI ◽  
D. RACHED ◽  
S. HIADSI ◽  
...  
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Density Functional ◽  
Local Density ◽  
Structural Phase ◽  
Theoretical Data ◽  
Young Modulus ◽  
Orbital Method ◽  
Full Potential ◽  
Direct Band

The structural, elastic and electronic properties of chalcopyrite compound CuInSe2 and CuGaSe2 have been investigated using the full-potential linearized muffin-tin orbital method (FP-LMTO) within the frame of density functional theory (DFT). In this approach, the local density approximation is used for the exchange-correlation potential using Perdew–Wang parametrization. The equilibrium lattice parameters, bulk modulus, transition pressure, elastic constants and their related parameters such as Poisson's ratio, Young modulus, shear modulus and Debye temperature were calculated and compared with available experimental and theoretical data. They are in reasonable agreement. In this paper the electronic properties are treated with GGA + U approach, which brings out the important role played by the d-state of noble metal (Cu) and give the correct nature of the energy band gap. Our obtained results show that both compounds exhibit semi-conductor behaviour with direct band gap.

scholarly journals Molecular modelling, spectroscopic characterization and nonlinear optical analysis on N-Acetyl-DL-methionine

2020 ◽  
Vol 66 (6 Nov-Dec) ◽  
pp. 749
Author(s):  
N. Günay ◽  
Ö. Tamer ◽  
D. Avcı ◽  
E. Tarcan ◽  
Y. Atalay
Keyword(s):  
Electronic Properties ◽  
Title Compound ◽  
Density Functional ◽  
Nonlinear Optical ◽  
Energy Gap ◽  
Spectroscopic Characterization ◽  
Oscillator Strengths ◽  
Basis Set ◽  
Molecular Electrostatic Potential Surface ◽  
Experimental Values

In this present methodical study, on the basis of the density functional theory (DFT), the first-principles calculations have been employed successfully to study the structural and electronic properties of N-acetyl-DL-methionine (C7H13NO3S) which is a derivative of DL-methionine which is also known DL-2-amino-4-methyl-thiobutanoic acid. Optimized molecular structure, vibrational frequencies and also 13C and 1H NMR chemical shift values of the title compound are provided in a detailed manner by using B3LYP and HSEH1PBE functionals by applying 6-311++G(d,p) basis set for calculations using Gaussian 09W program. The comparison of the calculated values with the experimental values provides important information about the title compound. In addition, the electronic properties (UV-Vis calculations) of the title compound, such as HOMO-LUMO energy values and energy gap, absorption wavelengths, oscillator strengths were performed basing on the optimized structure in gas phase. Moreover, the molecular electrostatic potential surface, dipole moment, nonlinear optical properties, linear polarizabilities and first hyperpolarizabilities and chemical parameters have also been studied.

Sign in / Sign up

Export Citation Format

Share Document