Enhancement of thermoelectric power factor by Si:B addition to higher manganese silicide film
2014 ◽
Vol 28
(26)
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pp. 1450181
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Keyword(s):
Higher manganese silicide film ( HMS , MnSi x, x = 1.73–1.75) with addition of Si : B has been prepared on quartz substrate ( SiO 2) by magnetron sputtering of MnSi 2 and Si : B (1 at.% B content) targets. It is found that the Si : B -added HMS film has a much lower electrical resistivity (R) but maintains its high Seebeck coefficient (S). As a result, the thermoelectric power factor, PF = S2/R, is greatly enhanced. It is also found that the metal In together with Ag -paste can be used as ohmic contact materials for measuring the electrical properties of the HMS film. The thermoelectric power factor can reach 1255 μW/m-K2 at 733 K for the Si : B -added HMS film, which is about two times higher than that of the pure HMS film.
2020 ◽
Vol 8
(27)
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pp. 13600-13609
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2015 ◽
Vol 3
(40)
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pp. 10500-10508
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2010 ◽
Vol 434-435
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pp. 393-396
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