Field effects on heterojunctions composed with electron-doped La1−xHfxMnO3 and Nb-SrTiO3 perovskites

2017 ◽  
Vol 31 (25) ◽  
pp. 1745008
Author(s):  
Xia Zhu ◽  
Meng Zhao ◽  
Ju Gao ◽  
Yaping Qi ◽  
Jiali Zeng ◽  
...  

Thin films and heterojunctions of Hf[Formula: see text]-doped LaMnO3 manganite have been studied. The sole tetravalent state of Hf[Formula: see text] ensures formation of [Formula: see text]-type La[Formula: see text]Hf[Formula: see text]MnO3 (LHMO) manganite. Photoinduced resistance was also observed as illuminated by visible light. The induced photoresistance (PR) could be greatly enhanced by the compressive strain. The LHMO/Nb-STO heterojunctions showed excellent rectifying characteristics, which are comparable with those [Formula: see text]-junctions of conventional semiconductors. Their transport properties are tunable electrically and magnetically. Such LHMO/Nb-STO heterojunctions have the potential to develop novel functional field-effect transistors based on manganite perovskites.

2007 ◽  
Vol 449 (1-3) ◽  
pp. 160-164 ◽  
Author(s):  
Hiroyuki Sugiyama ◽  
Takayuki Nagano ◽  
Ryo Nouchi ◽  
Naoko Kawasaki ◽  
Yohei Ohta ◽  
...  

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.


RSC Advances ◽  
2014 ◽  
Vol 4 (69) ◽  
pp. 36729-36737 ◽  
Author(s):  
J. C. Ribierre ◽  
Y. Yokota ◽  
M. Sato ◽  
A. Ishizuka ◽  
T. Tanaka ◽  
...  

We report the effects of crystalline grain orientation on the charge transport properties of a J-aggregate bisazomethine dye (DE2) in thin films.


2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.


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