Electrically-tunable magnetoresistance effect in magnetically modulated semiconductor heterostructure

We report on a theoretical study of magnetoresistance (MR) effect in a magnetically modulated semiconductor heterostructure (MMSH) under an applied bias, which can be constructed on surface of [Formula: see text] heterostructure by depositing two asymmetric ferromagnetic (FM) stripes. Bias-dependent transmission and conductance are calculated numerically, on the basis of both improved transfer matrix method (ITMM) and Landauer–Büttiker conductance theory. An obvious MR effect appears because of a significant difference of transmission between parallel and antiparallel (AP) magnetization configurations. Moreover, MR ratio can be tuned by the bias. These interesting features not only provide an alternative way to manipulate MR effect, but also may lead to an electrically-controllable MR device.

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Bias-Dependent Magnetoresistance Device Based on a Magnetically Confined GaAs/AlxGa1– xAs Heterostructure

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2020.2774 ◽

2020 ◽

Vol 15 (3) ◽

pp. 325-330

Author(s):

Dong-Hui Liang ◽

Mao-Wang Lu ◽

Xin-Hong Huang ◽

Meng-Rou Huang ◽

Zeng-Lin Cao

Keyword(s):

Transfer Matrix ◽

Transfer Matrix Method ◽

Matrix Method ◽

Information Storage ◽

Applied Bias ◽

Significant Difference ◽

Magnetically Confined ◽

Magnetoresistance Ratio ◽

Mr Effect

We apply a bias to a magnetoresistance (MR) device, which is constructed on surface of GaAs/AlxGa1– xAs heterostructure by patterning two asymmetric ferromagnetic stripes. Using improved transfer matrix method and Landauer–Büttiker theory, bias-dependent transmission, conductance and magnetoresistance ratio are calculated numerically. An obvious MR effect appears, because of a significant difference of transmission or conductance between parallel (P) and antiparallel (AP) magnetization configurations. MR ratio can be tuned by adjusting magnitude or direction of applied bias. These interesting features not only propose an alternative way to control MR effect, but also put forward an electrically-tunable MR device for magnetic information storage.

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Effect of the δ-doping on the magnetoresistance effect in a magnetically modulated nanostructure

International Journal of Modern Physics B ◽

10.1142/s0217979218502600 ◽

2018 ◽

Vol 32 (23) ◽

pp. 1850260 ◽

Cited By ~ 2

Author(s):

Jian-Duo Lu

Keyword(s):

Transfer Matrix ◽

Transfer Matrix Method ◽

Matrix Method ◽

Atomic Layer ◽

Magnetoresistance Effect ◽

Magnetic Nanostructure ◽

Doping Technique ◽

Mr Effect

With the help of the transfer-matrix method, we theoretically investigate the effect of the [Formula: see text]-doping on the magnetoresistance (MR) effect in a magnetic nanostructure, which can be realized by depositing two ferromagnetic strips on the top and bottom of a nanostructure and using the atomic layer doping technique. It is shown that an obvious MR effect can be obtained in this device, and it can be tuned by the position and weight of the [Formula: see text]-doping. This device can be used as a [Formula: see text]-doping-dependent MR device for magneto electronics applications.

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