Effect of spin–orbit coupling on the hot-electron energy relaxation in nanowires

2020 ◽  
Vol 34 (32) ◽  
pp. 2050322
Author(s):  
A. L. Vartanian ◽  
A. L. Asatryan ◽  
A. G. Stepanyan ◽  
K. A. Vardanyan ◽  
A. A. Kirakosyan
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electron Temperature ◽  
Electron Energy ◽  
Power Loss ◽  
Continuum Theory ◽  
Energy Relaxation ◽  
Spin Orbit ◽  
Hot Electron ◽  
Electrical Field Strength

The energy relaxation of hot electrons is proposed based on the spin–orbit (SO) interaction of both Rashba and Dresselhaus types with the effect of hot phonons. A continuum theory of optical phonons in nanowires taking into account the influence of confinement is used to study the hot-electron energy relaxation. The energy relaxation due to both confined (CO) and interface (IO) optical phonon emission on nanowire radius, electrical field strength, parameters of SO couplings and electron temperature is calculated. For considered values of the nanowire radius as well as other system parameters, scattering by IO phonons prevails over scattering by CO phonons. The presence of an electric field leads to the decrease of power loss in transitions between states with the same spin quantum numbers. With the increase of the electric field strength, the influence of the Dresselhaus SO interaction on the energy relaxation rate decreases. The effect of SO interaction does not change the previously obtained increasing dependence of power loss on electron temperature. The sensitivity of energy relaxation to the electric field also through the Rashba parameter allows controlling the rate of energy by electric field.

HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN

2002 ◽  
Vol 12 (02) ◽  
pp. 459-468 ◽  
Author(s):  
A. MATULIONIS ◽  
J. LIBERIS ◽  
L. ARDARAVIČIUS ◽  
J. SMART ◽  
D. PAVLIDIS ◽  
...  
Keyword(s):  
Energy Dissipation ◽  
Electron Temperature ◽  
Electron Energy ◽  
Noise Temperature ◽  
Energy Relaxation ◽  
Channel Measurements ◽  
Hot Electron ◽  
Optical Phonons ◽  
Field Range ◽  
Gas Channel

Microwave noise technique is applied to study energy dissipation in an AlN/GaN heterostructure containing a two-dimensional electron gas channel. Measurements of the dissipated power and the noise temperature are performed at 80 K lattice temperature in the electric field range up to 40 kV/cm. The energy relaxation time is found to decrease from 40 ps to 0.55 ps when the bias is increased. The experimental data are discussed in the electron temperature approximation assuming electron energy dissipation on optical phonons and hot-phonon effects. Dependencies of the hot-phonon number and the hot-phonon temperature on the hot-electron temperature are deduced. The frequency cutoff imposed by the limited energy dissipation through optical phonons is estimated.

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

2008 ◽  
Vol 23 (7) ◽  
pp. 075048 ◽  
Author(s):  
A Matulionis ◽  
J Liberis ◽  
E Šermukšnis ◽  
J Xie ◽  
J H Leach ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Energy Relaxation Time

Hot Electron Energy Relaxation in Gallium Nitride

1999 ◽  
Vol 176 (1) ◽  
pp. 369-372 ◽  
Author(s):  
N. M. Stanton ◽  
P. Hawker ◽  
A. J. Kent ◽  
T. S. Cheng ◽  
C. T. Foxon
Keyword(s):  
Gallium Nitride ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron

scholarly journals Quantum-confinement and Structural Anisotropy result in Electrically-Tunable Dirac Cone in Few-layer Black Phosphorous

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Kapildeb Dolui ◽  
Su Ying Quek
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Fields ◽  
Quantum Confinement ◽  
Density Functional ◽  
Black Phosphorus ◽  
Spin Orbit ◽  
Dirac Cone ◽  
Structural Anisotropy ◽  
Interaction Term

Abstract Two-dimensional (2D) materials are well-known to exhibit interesting phenomena due to quantum confinement. Here, we show that quantum confinement, together with structural anisotropy, result in an electric-field-tunable Dirac cone in 2D black phosphorus. Using density functional theory calculations, we find that an electric field, E ext, applied normal to a 2D black phosphorus thin film, can reduce the direct band gap of few-layer black phosphorus, resulting in an insulator-to-metal transition at a critical field, E c . Increasing E ext beyond E c can induce a Dirac cone in the system, provided the black phosphorus film is sufficiently thin. The electric field strength can tune the position of the Dirac cone and the Dirac-Fermi velocities, the latter being similar in magnitude to that in graphene. We show that the Dirac cone arises from an anisotropic interaction term between the frontier orbitals that are spatially separated due to the applied field, on different halves of the 2D slab. When this interaction term becomes vanishingly small for thicker films, the Dirac cone can no longer be induced. Spin-orbit coupling can gap out the Dirac cone at certain electric fields; however, a further increase in field strength reduces the spin-orbit-induced gap, eventually resulting in a topological-insulator-to-Dirac-semimetal transition.

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