scholarly journals Point Normal Metal-Superconductor (NS) Contact in Nonballistic Regime

2003 ◽  
Vol 17 (10n12) ◽  
pp. 649-656 ◽  
Author(s):  
I. N. Askerzade ◽  
I. O. Kulik
Keyword(s):  
Current Density ◽  
Andreev Reflection ◽  
Injection Current ◽  
Normal Metal ◽  
Excess Current ◽  
High Injection ◽  
Contact Conductivity ◽  
Injection Current Density

We analyze the point NS contact conductivity taking into account the depression of superconductivity at high-injection current density and Andreev reflection at the adaptive NS boundary. The dependence of the excess current on the voltage, as well as conductivity of contact at arbitrary voltage is obtained.

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

2013 ◽  
Vol 740-742 ◽  
pp. 978-981 ◽  
Author(s):  
Lin Cheng ◽  
Anant K. Agarwal ◽  
Craig Capell ◽  
Michael J. O'Loughlin ◽  
Khiem Lam ◽  
...  
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Large Area ◽  
Test Set ◽  
High Injection ◽  
Blocking Voltage ◽  
Set Up ◽  
P Type ◽  
Drift Layer ◽  
Injection Current Density

In this paper, we report our recently developed 1 cm2, 15 kV SiC p-GTO with an extremely low differential on-resistance (RON,diff) of 4.08 mΩ•cm2 at a high injection-current density (JAK) of 600 ~ 710 A/cm2. The 15 kV SiC p-GTO was built on a 120 μm, 2×1014/cm3 doped p-type SiC drift layer with a device active area of 0.521 cm2. Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the RON,diff at JAK of 600 ~ 710 A/cm2 decreased from 4.08 mΩ•cm2 at 20°C to 3.45 mΩ•cm2 at JAK of 600 ~ 680 A/cm2 at 200°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current at a VGK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.

scholarly journals Study on the Effect of Size on InGaN Red Micro-LEDs

2021 ◽  
Author(s):  
Ray-Hua Horng ◽  
Chun-Xin Ye ◽  
Po-Wei Chen ◽  
Daisuke Iida ◽  
Kazuhiro Ohkawa ◽  
...  
Keyword(s):  
Current Density ◽  
High Current Density ◽  
Light Emitting Diode ◽  
Blue Shift ◽  
Injection Current ◽  
Emission Wavelength ◽  
Direct Writing ◽  
Light Emitting ◽  
Full Color ◽  
Injection Current Density

Abstract In this research, five sizes (100⊆100, 75⊆75, 50⊆50, 25⊆25, 10⊆10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10×10 µm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

2019 ◽  
Vol 963 ◽  
pp. 280-283 ◽  
Author(s):  
Aoi Okada ◽  
Chiharu Ota ◽  
Johji Nishio ◽  
Akihiro Goryu ◽  
Ryosuke Iijima ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Current Density ◽  
Basal Plane ◽  
Stacking Faults ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Injection Current ◽  
Limiting Factor ◽  
Effects Of Temperature ◽  
Injection Current Density

To understand the effects of temperature and injection current density on expansion of Shockley stacking faults (SSFs) from basal-plane dislocations in 4H-SiC p-i-n diodes, the threshold current density for SSF expansion was investigated at eight temperatures by electroluminescence image observation. The threshold injection current density was found to decrease at lower temperatures and to increase at higher temperatures. We identified the origin of this temperature dependence and found that the limiting factor for expansion differed depending on the temperature.

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