MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS

2011 ◽  
Vol 25 (07) ◽  
pp. 465-471 ◽  
Author(s):  
CHANG ZHAO ◽  
M. ZHAO ◽  
Y. WANG ◽  
A. J. LV ◽  
G. M. WU ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Semiconductor Quantum Dots ◽  
Dangling Bond ◽  
Good Qualitative Agreement ◽  
Kinetic Effects ◽  
Selection Of

By means of kinetic Monte Carlo simulation, which is based on the random selection of the surface hops of single adatom, we investigate the atoms' kinetics during the growth of the semiconductor quantum dots in a molecular beam epitaxy system, the deposition, diffusion and nucleation are considered as the main relevant processes during the growth of the quantum dots, taking into account the contribution of the dangling bond of the adatoms in the simulation. The dependence of the quantum dot size on the temperature and flux as well as the atomic kinetic effects are discussed in detail. The simulation results are in good qualitative agreement with those of the experiment.

Atomic kinetic research of ordered quantum dot growth induced by dislocation on the substrate

2014 ◽  
Vol 28 (05) ◽  
pp. 1450033
Author(s):  
Chang Zhao ◽  
M. Zhao ◽  
Y. Wang ◽  
A. J. Lv ◽  
G. J. Xing ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Kinetic Monte Carlo ◽  
Initial Condition ◽  
Dangling Bond ◽  
Good Qualitative Agreement ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based ◽  
Atomic Kinetics

In this study, the modified effects of stress originating from the dislocation on the substrate to the semiconductor quantum dot growth are investigated by performing an event-based continuous kinetic Monte Carlo simulation, in which the contribution of the dangling bond of the atom is considered. The research results indicate that the change of binding energy initiated by the stress between the deposit atom and the substrate's atoms may significantly influence the atoms' kinetic behaviors, and on the pattern surface the atoms' kinetic effects are very sensitive to the initial condition of the substrate. In addition, the dependence of the atomic kinetics on the growth flux and temperature are also studied. The simulation results are in good qualitative agreement with those of our experiment.

Kinetic Monte Carlo Simulation of Semiconductor Quantum Dot Growth

2007 ◽  
Vol 121-123 ◽  
pp. 1073-1076
Author(s):  
C. Zhao ◽  
Y.H. Chen ◽  
J. Sun ◽  
W. Lei ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Quantum Dot ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
Growth Conditions ◽  
Semiconductor Quantum Dot ◽  
Simulation Results ◽  
Kinetic Effects ◽  
Event Based

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

2006 ◽  
Vol 137 (11) ◽  
pp. 630-633 ◽  
Author(s):  
Chang Zhao ◽  
Y.H. Chen ◽  
C.X. Cui ◽  
B. Xu ◽  
L.K. Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Kinetic Monte Carlo Simulation ◽  
Patterned Substrate
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