Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon
2014 ◽
Vol 28
(29)
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pp. 1450229
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Keyword(s):
By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.
2017 ◽
Vol 19
(43)
◽
pp. 29685-29692
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2018 ◽
Vol 32
(29)
◽
pp. 1850323
2018 ◽
Vol 15
(5)
◽
pp. 1484-1489
2018 ◽
Vol 20
(47)
◽
pp. 29826-29832
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2018 ◽
Vol 31
(6)
◽
pp. 756-760
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