CONTRIBUTION OF THE MORPHOLOGICAL GRAIN SIZES TO THE ELECTRICAL RESISTIVITY OF PLATINUM AND GOLD THIN FILMS

We have measured the morphological grain sizes of nanostructured platinum and gold thin films. In previous works their electrical resistivities have been measured and a theoretical approach was proposed to explain the resistivity experimental data. It will be shown that within the framework of our theoretical approach, the morphological grain sizes play an essential role in the electrical resistivity of these metallic thin films.

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ELECTRICAL RESISTIVITY OF NANOSTRUCTURED PLATINUM AND GOLD THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x04006086 ◽

2004 ◽

Vol 11 (02) ◽

pp. 223-227 ◽

Cited By ~ 17

Author(s):

M. C. SALVADORI ◽

A. R. VAZ ◽

R. J. C. FARIAS ◽

M. CATTANI

Keyword(s):

Experimental Data ◽

Thin Films ◽

Surface Roughness ◽

Electrical Resistivity ◽

Room Temperature ◽

Theoretical Estimate ◽

Vacuum Arc ◽

Arc Plasma ◽

Correlation Lengths ◽

Gold Thin Films

We have measured, at room temperature, the resistivity, the surface roughness and the lateral surface correlation lengths of nanostructured platinum and gold thin films. The films' thickness d, deposited by vacuum arc plasma, is in the range 1.31≤d≤11.66 nm for platinum and 1.77≤d≤10.46 nm for gold. A theoretical estimate of our experimental data has been made.

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ELECTRICAL RESISTIVITY OF PLATINUM AND GOLD THIN FILMS: A THEORETICAL APPROACH

Surface Review and Letters ◽

10.1142/s0218625x04006141 ◽

2004 ◽

Vol 11 (03) ◽

pp. 283-290 ◽

Cited By ~ 8

Author(s):

M. CATTANI ◽

M. C. SALVADORI

Keyword(s):

Experimental Data ◽

Thin Films ◽

Electrical Resistivity ◽

Quantum Mechanical ◽

Quantum Approach ◽

Mechanical Approach ◽

Gold Thin Films ◽

Quantum Mechanical Approach ◽

Theory And Experiment ◽

Good Agreement

In a recent work we have proposed a quantum-mechanical approach to explaining our resistivity experimental results for platinum and gold thin films. Good agreement was found between theory and experiment. In that work only the main features of our calculations were pointed out. In the present work the quantum approach calculations are shown in detail and the predictions are compared with our experimental data.

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MEASUREMENT OF CRITICAL EXPONENTS OF NANOSTRUCTURED GOLD THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x03005694 ◽

2003 ◽

Vol 10 (06) ◽

pp. 903-908 ◽

Cited By ~ 8

Author(s):

L. L. MELO ◽

M. C. SALVADORI ◽

M. CATTANI

Keyword(s):

Thin Films ◽

Critical Exponents ◽

Growth Dynamics ◽

Scanning Tunneling ◽

Silicon Substrates ◽

Tunneling Microscopy ◽

Grain Sizes ◽

Metal Plasma ◽

Nanostructured Gold ◽

Gold Thin Films

We have fabricated gold thin films by metal plasma ion deposition on silicon substrates. The roughness of these nanostructured films has been measured by scanning tunneling microscopy (STM) and we have determined the growth dynamics critical exponents. We have also measured the grain sizes as a function of the film thickness.

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Electrical resistivity and elastic wave propagation anisotropy in glancing angle deposited tungsten and gold thin films

Applied Surface Science ◽

10.1016/j.apsusc.2019.01.041 ◽

2019 ◽

Vol 475 ◽

pp. 606-614 ◽

Cited By ~ 6

Author(s):

Raya El Beainou ◽

Asma Chargui ◽

Paulo Pedrosa ◽

Alexis Mosset ◽

Sébastien Euphrasie ◽

...

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Wave Propagation ◽

Elastic Wave ◽

Elastic Wave Propagation ◽

Glancing Angle ◽

Gold Thin Films

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EFFECT OF THICKNESS ON THE STRUCTURAL, MICROSTRUCTURAL, ELECTRICAL AND MAGNETIC PROPERTIES OF Ni FILMS ELABORATED BY PULSED ELECTRODEPOSITION ON Si SUBSTRATE

Surface Review and Letters ◽

10.1142/s0218625x18500580 ◽

2018 ◽

Vol 25 (02) ◽

pp. 1850058

Author(s):

T. KACEL ◽

A. GUITTOUM ◽

M. HEMMOUS ◽

E. DIRICAN ◽

R. M. ÖKSÜZOGLU ◽

...

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Electrical Resistivity ◽

Rutherford Backscattering Spectrometry ◽

Lattice Parameter ◽

Anisotropy Constant ◽

Saturation Field ◽

Grain Sizes ◽

Electrical And Magnetic Properties ◽

Effective Anisotropy Constant

We have studied the effect of thickness on the structural, microstructural, electrical and magnetic properties of Ni films electrodeposited onto [Formula: see text]-Si (100) substrates. A series of Ni films have been prepared for different potentials ranging from [Formula: see text]1.6[Formula: see text]V to [Formula: see text]2.6[Formula: see text]V. Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), four point probe technique, atomic force microscopy (AFM) and vibrating sample magnetometry (VSM) have been used to investigate the physical properties of elaborated Ni thin films. From the analysis of RBS spectra, we have extracted the films thickness [Formula: see text] ([Formula: see text] ranges from 83[Formula: see text]nm to 422[Formula: see text]nm). We found that the Ni thickness, [Formula: see text] (nm), linearly increases with the applied potential. The Ni thin films are polycrystalline and grow with the [Formula: see text] texture. The lattice parameter [Formula: see text] (Å) monotonously decreases with increasing thickness. However, a positive strain was noted indicating that all the samples are subjected to a tensile stress. The mean grain sizes [Formula: see text] (nm) and the strain [Formula: see text] decrease with increasing thickness. The electrical resistivity [Formula: see text] ([Formula: see text]cm) increases with [Formula: see text] for [Formula: see text] less than 328[Formula: see text]nm. The diffusion at the grain boundaries may be the important factor in the electrical resistivity. From AFM images, we have shown that the Ni surface roughness decreases with increasing thickness. The coercive field [Formula: see text], the squareness factor [Formula: see text], the saturation field [Formula: see text] and the effective anisotropy constant [Formula: see text] are investigated as a function of Ni thickness and grain sizes. The correlation between the magnetic and the structural properties is discussed.

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Temperature Dependence of the Electrical Resistivity of Polymerized C60 Thin Films

MRS Proceedings ◽

10.1557/proc-734-b9.30 ◽

2002 ◽

Vol 734 ◽

Cited By ~ 2

Author(s):

R. Govinthasamy ◽

J. H. Rhee ◽

S. C Sharma

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Temperature Dependence ◽

Uv Irradiation ◽

High Vacuum ◽

Single Crystal Silicon ◽

Laser Raman Spectroscopy ◽

Crystal Silicon ◽

Laser Raman ◽

Electrical Resistivities

ABSTRACTHighly conducting thin films of C60 were deposited by thermal evaporation in high vacuum on single crystal silicon substrates. The microstructure of the films was characterized by using Atomic Force Microscopy, and laser Raman spectroscopy. The films were polymerized by uv irradiation. The dc electrical resistivities of the as-deposited and uv-polymerized films were measured as functions of temperature between 295 and 17K by the four-probe technique. We present results on the effects of uv-irradiation on the surface microstructure and the temperature dependence of the electrical resistivity of these films.

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