SPELEEM: Combining LEEM and Spectroscopic Imaging

1998 ◽  
Vol 05 (06) ◽  
pp. 1287-1296 ◽  
Author(s):  
Th. Schmidt ◽  
S. Heun ◽  
J. Slezak ◽  
J. Diaz ◽  
K. C. Prince ◽  
...  

At present the only surface electron microscope which allows true characteristic XPEEM (photoemission electron microscopy using synchrotron radiation) and structural characterization is the spectroscopic LEEM developed at the Technical University Clausthal in the early nineties. This instrument has in the past been used mainly for LEEM studies of various surface and thin film phenomena, because it had very limited access to synchrotron radiation. Now the microscope is connected quasipermanently to the undulator beamline 6.2 at the storage ring ELETTRA, operating successfully since the end of 1996 under the name SPELEEM (Spectroscopic PhotoEmission and Low Energy Electron Microscope). The high brightness of the ELETTRA light source, together with an optimized instrument, results in a spatial resolution better than 25 nm and an energy resolution better than 0.5 eV in the XPEEM mode. The instrument can be used alternately for XPEEM, LEEM, LEED (low energy electron diffraction), MEM (mirror electron microscopy) and other imaging modes, depending upon the particular problem studied. The combination of these imaging modes allows a comprehensive characterization of the specimen. This is of particular importance when the chemical identification of structurar features is necessary for the understanding of a surface or thin film process. In addition, PED (photoelectron diffraction) and VPEAD (valence photoelectron angular distribution) of small selected areas give local atomic configuration and band structure information, respectively.

2017 ◽  
Vol 659 ◽  
pp. 31-42 ◽  
Author(s):  
P.C. Mende ◽  
Q. Gao ◽  
A. Ismach ◽  
H. Chou ◽  
M. Widom ◽  
...  

Author(s):  
S. M. Kennedy ◽  
C. X. Zheng ◽  
W. X. Tang ◽  
D. M. Paganin ◽  
D. E. Jesson

We extend the theory of Laplacian image contrast in mirror electron microscopy (MEM) to the case where the sample is illuminated by a parallel, collimated beam. This popular imaging geometry corresponds to a modern low energy electron microscope equipped with a magnetic objective lens. We show that within the constraints of the relevant approximations; the results for parallel illumination differ only negligibly from diverging MEM specimen illumination conditions.


1991 ◽  
Vol 237 ◽  
Author(s):  
R. M. Tromp ◽  
M. C. Reuter

Abstract- We have designed and built a Low Energy Electron Microscope for surface and interface studies in Ultra High Vacuum. In this paper we present major features of the design, and some of our results on surfactant mediated Ge growth on Si(001).


2001 ◽  
Vol 08 (03n04) ◽  
pp. 337-346 ◽  
Author(s):  
A. PAVLOVSKA ◽  
E. BAUER

The experimental possibilities and limitations of the study of the MRE growth of GaN on 6H-SiC(0001) in a low energy electron microscope are discussed. Results illustrating these possibilities and limitations are presented. We disagree with the interpretation given in a recent report on some of the results. In this paper, we present our own interpretation of the experimental data and provide the reasons why the earlier interpretation is incorrect.


2008 ◽  
Vol 1088 ◽  
Author(s):  
Marian Mankos ◽  
Vassil Spasov ◽  
Liqun Han ◽  
Shinichi Kojima ◽  
Ximan Jiang ◽  
...  

AbstractA novel low energy electron microscope (LEEM) aimed at improving the throughput and extending the applications for semiconductor devices has been developed. A dual beam approach, where two beams with different landing energies illuminate the field of view, is used to mitigate the charging effects when the LEEM is used to image semiconductor substrates with insulating or composite (insulator, semiconductor, metal) surfaces. We have experimentally demonstrated this phenomenon by imaging a variety of semiconductor device wafers without deleterious charging effects. Results from several important semiconductor device layers will be illustrated in detail.


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