The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination
Keyword(s):
The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302
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2017 ◽
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pp. 1974-1982
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2003 ◽
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