Radiative Recombination in the Cu(In,Ga)Se2 Thin Films Irradiated with Hydrogen Ions

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940033
Author(s):  
O. Borodavchenko ◽  
V. Zhivulko ◽  
M. Yakushev ◽  
M. Sulimov
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Solid Solutions ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Hydrogen Ions ◽  
Photoluminescence Excitation ◽  
Photoluminescence Spectra ◽  
Induced Defects ◽  
Irradiation Induced Defects

The irradiation-induced effects in Cu(In,Ca)Se2 thin films after irradiation with hydrogen ions with dose of [Formula: see text][Formula: see text]cm[Formula: see text] and different energies in the range of 2.5–10[Formula: see text]keV were studied. Irradiated and nonirradiated thin films were investigated by low-temperature (4.2[Formula: see text]K) photoluminescence and photoluminescence excitation methods. The appearance of intense bands at [Formula: see text][Formula: see text]eV and 0.77[Formula: see text]eV in the photoluminescence spectra may be related to radiative recombination on the irradiation-induced defects with deep energy levels in the bandgap of Cu(In,Ca)Se2 solid solutions. A possible nature of these defects and process of radiative recombination are discussed.

scholarly journals Излучательная рекомбинация на ионно-индуцированных дефектах в тонких пленках твердых растворов Cu(In, Ga)Se-=SUB=-2-=/SUB=-

2021 ◽  
Vol 55 (2) ◽  
pp. 127
Author(s):  
О.М. Бородавченко ◽  
В.Д. Живулько ◽  
А.В. Мудрый ◽  
М.В. Якушев ◽  
И.А. Могильников
Keyword(s):  
Thin Films ◽  
Solid Solutions ◽  
Radiative Recombination ◽  
Energy Levels ◽  
Photoluminescence Spectra ◽  
Free Electrons ◽  
Excitation Spectra ◽  
Radiation Induced ◽  
Mathematical Processing ◽  
Induced Defects

In thin films of Cu(In,Ga)Se2 solid solutions radiation-induced effects after irradiation of hydrogen ions with an energy of 2.5, 5 and 10 keV with dose of ~ 3∙10^15 cm-2 were studied. A comparative analysis of the optical characteristics of non-implanted and implanted Cu(In,Ga)Se2 thin films was carried out based on the measurements of photoluminescence spectra and the luminescence excitation spectra at liquid helium temperature of ~ 4.2 K. The bandgap of Cu(In,Ga)Se2 solid solutions determined from the data of mathematical processing of the luminescence excitation spectra was ~ 1.171 eV. An intense band with a maximum of ~ 1.089 eV was found in the photoluminescence spectra of non-implanted and hydrogen-implanted Cu(In,Ga)Se2 thin films caused by the recombination of free electrons with holes localized in the tails of the valence band. It was established that appearance of intense broad bands in the photoluminescence spectra with maxima in the energy range of ~ 0.92 eV and ~ 0.77 eV is due to radiative recombination of nonequilibrium charge carriers at deep energy levels of acceptor type ion-induced defects formed in the bandgap of Cu(In,Ga)Se2 solid solutions. The conditions for the appearance of the ionic passivation effect of dangling electronic bonds on the surface and in the bulk of Cu(In,Ga)Se2 polycrystalline films, possible nature of point defects in the structure and the mechanisms of radiative recombination are discussed.

Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature anneal of electron irradiation induced defects in p type silicon

1998 ◽  
Vol 14 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
H. E. Maes ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Type Silicon ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low-temperature irradiation-induced defects inp-type germanium

2010 ◽  
Vol 81 (3) ◽  
Author(s):  
Vl. Kolkovsky ◽  
M. Christian Petersen ◽  
A. Mesli ◽  
A. Nylandsted Larsen
Keyword(s):  
Low Temperature ◽  
Temperature Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

scholarly journals Fast recovery of ion-irradiation-induced defects in Ge₂Sb₂Te₅ thin films at room temperature

2021 ◽  
Author(s):  
Martin Hafermann ◽  
Robin Schock ◽  
Chenghao Wan ◽  
Jura Rensberg ◽  
Mikhail Kats ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Fast Recovery ◽  
Induced Defects ◽  
Irradiation Induced Defects

In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide

2019 ◽  
Vol 48 (6) ◽  
pp. 3849-3853
Author(s):  
S. M. Tunhuma ◽  
F. D. Auret ◽  
H. T. Danga ◽  
J. M. Nel ◽  
M. M. Diale
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
In Situ Study ◽  
Temperature Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects

scholarly journals Low-temperature technology and physical processes in green thin-film phosphor Zn2GeO4-Mn

2001 ◽  
Vol 667 ◽  
Author(s):  
V. Bondar ◽  
S. Popovich ◽  
T. Felter ◽  
J. Wager
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Esr Spectra ◽  
Photoluminescence Excitation ◽  
Manganese Ions ◽  
Physical Processes ◽  
Excitation Spectra ◽  
Lower Temperature ◽  
Electro Luminescence

ABSTRACTThin-film Zn2GeO4:Mn phosphors with lower temperature of crystallization and potentially compatible with industrial technologies were investigated. The technology of thin films synthesis has been developed and their structure and crystal parameters have been investigated. Photoluminescence excitation spectra, photoconductivity, temperature dependencies and ESR-spectra of manganese ions were studied. A mechanism for luminescence in this phosphor has been proposed. Results are presented of cathodo- and electro-luminescence of thin film structures of Zn2GeO4:Mn.

scholarly journals Синтез и фотолюминесценция наноразмерных структур на основе сульфидов цинка, кадмия и марганца в полиакрилатной матрице

2020 ◽  
Vol 54 (12) ◽  
pp. 1321
Author(s):  
А.А. Исаева ◽  
В.П. Смагин
Keyword(s):  
Optical Radiation ◽  
Energy Levels ◽  
Radiation Energy ◽  
Photoluminescence Excitation ◽  
Photoluminescence Spectra ◽  
Interband Transitions ◽  
Nanoscale Structures ◽  
Semiconductor Structures ◽  
Recombination Processes ◽  
Zinc Cadmium

Photoluminescence of nanoscale structures based on zinc, cadmium and manganese sulfides depending on the conditions of synthesis and doping in the medium (poly)methylmethacrylate (PMMA). Photoluminescence excitation is associated with interband transitions of electrons in the semiconductor structures, absorption of optical radiation energy by defects in the crystal structure, as well as with the transfer of energy to the excited energy levels of Mn2+ ions. Luminescence occurs as a result of recombination processes at the levels of defects in the structure of the surface of particles and 4T1 → 6A1 transitions between the proper energy levels of Mn2+ ions. Based on changes in the photoluminescence spectra and photoluminescence excitation of PMMA/(Zn,Cd,Mn)S compositions, assumptions are made about the structure of particles. It is shown that their photoluminescence is affected by the distribution of Mn2+ ions in the structure of layers and on the surface of particles.

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