EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

2013 ◽  
Vol 06 (04) ◽  
pp. 1350044
Author(s):  
CHEN CONG ◽  
LU YANG FAN ◽  
HE HAI PING ◽  
WU KE WEI ◽  
YE ZHI ZHEN

The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au -assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor–solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO , which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano- ZnO was improved due to the presence of Au , according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano- ZnO may be due to the less lattice mismatch.

2003 ◽  
Vol 251 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
Kenji Momose ◽  
Hiroo Yonezu ◽  
Yuzo Furukawa ◽  
Atsushi Utsumi ◽  
Yusuke Yoshizumi ◽  
...  

2004 ◽  
Vol 266 (4) ◽  
pp. 505-510 ◽  
Author(s):  
J.F. Yan ◽  
Y.M. Lu ◽  
Y.C. Liu ◽  
H.W. Liang ◽  
B.H. Li ◽  
...  

1999 ◽  
Vol 4 (S1) ◽  
pp. 870-877 ◽  
Author(s):  
H. Amano ◽  
M. Iwaya ◽  
N. Hayashi ◽  
T. Kashima ◽  
M. Katsuragawa ◽  
...  

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.


2014 ◽  
Vol 1707 ◽  
Author(s):  
Abdiel Rivera ◽  
Anas Mazady ◽  
Mehdi Anwar

ABSTRACTWe report the growth of ZnO horizontal (NRs) on p-Si substrate at low temperature without any assisting mechanism. The NRs were grown at 90°C on a ZnO film previously deposited using metal-organic chemical vapor deposition. The horizontal nanowires have diameters in the range of 200 – 500nm and lengths between 1 – 7 µm, depending upon the duration of the growth and the ratio of the precursors. The density of the NRs was controlled by varying the concentration of zinc nitrate (Zn(NO3)2) while keeping hexamethylenetetramine (HMTA) constant. Density of horizontal NRs increased with lower zinc nitrate concentration (from 11.35 to 3.29 mMol) for a growth duration of 18hrs. Increased zinc nitrate concentration of 3.29mMol resulted in an asymmetric growth along the vertical axis due to oxygen termination giving rise to slower growth rates.


2007 ◽  
Vol 102 (4) ◽  
pp. 044908 ◽  
Author(s):  
C. Bekeny ◽  
T. Voss ◽  
B. Hilker ◽  
J. Gutowski ◽  
R. Hauschild ◽  
...  

2020 ◽  
Vol 544 ◽  
pp. 125703 ◽  
Author(s):  
Yoriko Tominaga ◽  
Shingo Hirose ◽  
Kentaro Hirayama ◽  
Hitoshi Morioka ◽  
Noriaki Ikenaga ◽  
...  

2004 ◽  
Vol 831 ◽  
Author(s):  
Daisuke Muto ◽  
Ryotaro Yoneda ◽  
Hiroyuki Naoi ◽  
Masahito Kurouchi ◽  
Tsutomu Araki ◽  
...  

ABSTRACTThe effects of the nitridation process of (0001) sapphire on crystalline quality of InN were clearly demonstrated. The InN films were grown on NFM (nitrogen flux modulation) HT-InN or LT-InN buffer layers, which had been deposited on nitridated sapphire substrates. We found that low-temperature nitridation of sapphire is effective in improving the tilt distribution of InN films. Whereas the twist distribution remained narrow and almost constant, independent of nitridation conditions, when LT-InN buffer layers were used. The XRC-FWHM value of 54 arcsec for (0002) InN, the lowest reported to date, was achieved by using the LT-InN buffer layer and sapphire nitridation at 300°C for 3 hours.


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