Low Temperature Growth of Horizontal ZnO Nanorods

ABSTRACTWe report the growth of ZnO horizontal (NRs) on p-Si substrate at low temperature without any assisting mechanism. The NRs were grown at 90°C on a ZnO film previously deposited using metal-organic chemical vapor deposition. The horizontal nanowires have diameters in the range of 200 – 500nm and lengths between 1 – 7 µm, depending upon the duration of the growth and the ratio of the precursors. The density of the NRs was controlled by varying the concentration of zinc nitrate (Zn(NO3)2) while keeping hexamethylenetetramine (HMTA) constant. Density of horizontal NRs increased with lower zinc nitrate concentration (from 11.35 to 3.29 mMol) for a growth duration of 18hrs. Increased zinc nitrate concentration of 3.29mMol resulted in an asymmetric growth along the vertical axis due to oxygen termination giving rise to slower growth rates.

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Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2006.08.030 ◽

2007 ◽

Vol 515 (5) ◽

pp. 2921-2925 ◽

Cited By ~ 27

Author(s):

Chunyu Wang ◽

Volker Cimalla ◽

Genady Cherkashinin ◽

Henry Romanus ◽

Majdeddin Ali ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Indium Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Transparent Conducting ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

Applied Physics Letters ◽

10.1063/1.3475394 ◽

2010 ◽

Vol 97 (5) ◽

pp. 053502 ◽

Cited By ~ 6

Author(s):

S. Tan ◽

S. L. Selvaraj ◽

T. Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

MRS Proceedings ◽

10.1557/opl.2012.1466 ◽

2012 ◽

Vol 1439 ◽

pp. 109-114

Author(s):

XinYi Chen ◽

Alan M. C. Ng ◽

Aleksandra B. Djurišić ◽

Chi Chung Ling ◽

Wai-Kin Chan ◽

...

Keyword(s):

Light Emitting Diodes ◽

Zno Nanorods ◽

Emission Spectra ◽

Chemical Vapor ◽

Organic Chemical ◽

Light Emitting ◽

Type Layer ◽

Growth Properties ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

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