Photovoltaic properties of silicon nanocrystals in silicon nitride prepared by ammonia sputtering

2015 ◽  
Vol 08 (05) ◽  
pp. 1550052
Author(s):  
Xiaobo Chen
Keyword(s):  
Silicon Nitride ◽  
Flow Rate ◽  
Photoelectron Spectroscopy ◽  
Silicon Nanocrystals ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Xps Characterization

In this work, we present an investigation of the photovoltaic properties of low-temperature (700°C annealing temperature) prepared P -doped Silicon nanocrystals ( Si   NCs ) in silicon nitride by ammonia sputtering followed by rapid thermal annealing (RTA). We examined how the flow rate of NH3influenced the structural properties of the annealed films by using Raman scattering, grazing incidence X-ray diffraction (GI XRD) and transmission electron microscopy (TEM), it was found that the appropriate flow rate of NH3is 3 sccm. For the sample deposited at the flow rate of 3 sccm, TEM image showed that Si   NCs were formed with a mean size about 3.7 nm and the density of ~ 2.1 × 1012cm-2; X-ray photoelectron spectroscopy (XPS) characterization showed the existence of Si – P bonds, indicating effective P doping; the average absorptance of higher than 65% and a significant amount of photocurrent makes it suitable for photoactive. Moreover, the experimental P -doped Si   NCs : Si3N4/ p - Si heterojunction solar cell has been fabricated, and the device performance was studied. The photovoltaic device fabricated exhibits an open-circuit voltage (VOC) and a short-circuit current density (JSC) of 470 mV and 3.25 mA/cm2, respectively.

Effects of Deposition Parameters on the Structure and Photovoltaic Performance of Si Thin Films by Metal Induced Growth

2008 ◽  
Vol 1123 ◽  
Author(s):  
Peter T. Mersich ◽  
Shubhranshu Verma ◽  
Wayne A. Anderson ◽  
Rossman F. Giese
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Metal Induced Growth

AbstractA metal-induced growth (MIG) process was employed to deposit thin films of microcrystalline silicon (μc-Si) for solar cell applications. Due to different grain orientations of the crystals, the absorption coefficient of μc-Si is about 10 times higher than the absorption coefficient of single crystalline Si. The properties of the Si film were investigated resulting from variations in several parameters. A range of Ni and Co thicknesses were examined from 7.5 nm to 60 nm including combinations of the two, while the dc sputtering power was stepped up from 150 W to 225 W. The structure of the resulting film was studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD). SEM of the film revealed that 5 hr of Si deposition at 150 W yields a film thickness of 6.5 μm and a maximum grain size of about 0.6 μm. EDS data showed that at the middle of the Si film the atomic percentage of the Si was 99.17%. XRD data showed that the dominant crystal orientation is {220}. To characterize the photovoltaic properties of the μc-Si, Schottky photodiodes were fabricated. Ni alone as the seed layer resulted in ohmic behavior. With Co only, MIG formed a rectifying contact with open-circuit voltage (V∝). The combination of Co layered over Ni formed better thin films and gave a Voc of 0.24 V and short-circuit current density (Jsc) of 5.0 mA/cm2 since the Co prevents Ni contamination of the top of the grown Si layer.

Influence of deposition time and annealing treatments on the properties of chemically deposited Sn2Sb2S5 thin films and photovoltaic behavior of Sn2Sb2S5-based solar cells

2020 ◽  
Vol 75 (10) ◽  
pp. 887-901
Author(s):  
Patrick Akata Nwofe ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Deposition Time ◽  
Short Circuit ◽  
Cadmium Sulphide ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Optical Absorption Coefficient ◽  
Soda Lime Glass ◽  
X Ray

AbstractThin films of chemical bath deposited tin antimony sulphide (Sn2Sb2S5) were tuned by varying the deposition time between 1 and 3 h, and postdeposition heat treatments. The films were grown on soda lime glass (SLG) and on molybdenum glass (Mo-SLG) substrates, respectively. The film thickness increased with deposition time up to 2 h and decreased thereafter. Structural analysis from X-ray diffractometry showed that the films were single phase. This was corroborated by X-ray photoelectron spectroscopy (XPS) analysis. Energy-dispersive spectroscopy results give antimony/sulphur (Sb/S) ratio and antimony/tin (Sb/Sn) ratio that increased with deposition time in the SLG substrates only. Optical constants extracted from optical spectroscopy measurements give optical absorption coefficient (α) > 104 cm−1, and direct energy bandgap with values in the range 1.30 to 1.48 eV. The Hall effect measurements performed on films grown on the SLG substrates indicated that the films were p-type electrical conductivity with electrical resistivity in the range 103 to 104 Ωcm. The films grown on the Mo-SLG served as absorber layers to fabricate thin film heterojunction solar cell devices in the substrate configuration with a cadmium sulphide (CdS) window partner. The best device yielded a short-circuit current density of 20 mA/cm2, open-circuit voltage of 0.012 V and a solar conversion efficiency of 0.04%.

scholarly journals Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

2021 ◽  
Author(s):  
Mingqiang Zhong ◽  
Qin Feng ◽  
Changlai Yuan ◽  
Xiao Liu ◽  
Baohua Zhu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Photovoltaic Effect ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Light Conditions ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices

2016 ◽  
Vol 94 (7) ◽  
pp. 687-692
Author(s):  
Masood Mehrabian ◽  
Naser Ghasemian
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Zno Nanorods ◽  
Growth Period ◽  
Short Circuit Current ◽  
Nanorod Array ◽  
Open Circuit ◽  
Zno Film ◽  
Photovoltaic Properties ◽  
Pbs Quantum Dot

Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbS QD as photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively.

scholarly journals Direct AFM-based nanoscale mapping and tomography of open-circuit voltages for photovoltaics

2018 ◽  
Vol 9 ◽  
pp. 1802-1808 ◽  
Author(s):  
Katherine Atamanuk ◽  
Justin Luria ◽  
Bryan D Huey
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Three Dimensional ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Order Of Magnitude ◽  
Individual Grains

The nanoscale optoelectronic properties of materials can be especially important for polycrystalline photovoltaics including many sensor and solar cell designs. For thin film solar cells such as CdTe, the open-circuit voltage and short-circuit current are especially critical performance indicators, often varying between and even within individual grains. A new method for directly mapping the open-circuit voltage leverages photo-conducting AFM, along with an additional proportional-integral-derivative feedback loop configured to maintain open-circuit conditions while scanning. Alternating with short-circuit current mapping efficiently provides complementary insight into the highly microstructurally sensitive local and ensemble photovoltaic performance. Furthermore, direct open-circuit voltage mapping is compatible with tomographic AFM, which additionally leverages gradual nanoscale milling by the AFM probe essentially for serial sectioning. The two-dimensional and three-dimensional results for CdTe solar cells during in situ illumination reveal local to mesoscale contributions to PV performance based on the order of magnitude variations in photovoltaic properties with distinct grains, at grain boundaries, and for sub-granular planar defects.

Plasma Synthesis of Silicon Nanocrystals: Application to Organic/Inorganic Photovoltaics through Solution Processing

2014 ◽  
Vol 783-786 ◽  
pp. 2002-2004 ◽  
Author(s):  
Tomohiro Nozaki ◽  
Yi Ding ◽  
Ryan Gresback
Keyword(s):  
Solar Cell ◽  
Silicon Nanocrystals ◽  
Semiconductor Device ◽  
Bulk Heterojunction ◽  
Short Circuit ◽  
Weight Fraction ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Plasma Synthesis ◽  
Free Standing

Silicon nanocrystals (SiNCs) have unique optical and electronic properties that are advantageous for semiconductor device applications and here their application to solar cell is presented. Free-standing, narrow size distribution SiNCs were synthesized by non-thermal plasma using silicon tetrachloride (SiCl4) successfully. Blended solution of as-produced SiNCs and P3HT, or Poly(3-hexylthiophene-2,5-diyl), was spin-casted to form bulk heterojunction solar cell devices. As the weight fraction of SiNCs increased up to 50 wt%, the short circuit current and the power conversion efficiency dramatically increased, while the open circuit voltage and the fill factor do not change significantly. The improved performance is attributable to increased probability of exciton dissociation at acceptor SiNCs and donor P3HT interface.

CONTRIBUTION OF n-TYPE AMORPHOUS CARBON ON THE FABRICATION OF n-C:P/p-Si SOLAR CELLS

2004 ◽  
Vol 11 (06) ◽  
pp. 569-575 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO
Keyword(s):  
Solar Cells ◽  
Photoelectron Spectroscopy ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Carbon Films ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
P Content ◽  
Phosphorus Doped

The phosphorus doped n -type ( n - C : P ) carbon films and fabrication of n - C : P / p - Si heterojunction solid-state solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target have been studied. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22–1.77 atomic percentages. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage ( V oc ) and short circuit current density ( J sc ) for the cells are observed to vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm2, respectively. The cell fabricated using the target with the amount of P by 7 weight percentages (Pwt%) shows the highest energy conversion efficiency, η=1.14% and fill factor, FF =41%. In this paper, the dependence of P content on the electrical and optical properties of the deposited n - C : P films and the photovoltaic characteristic of the n - C : P / p - Si cells are reported.

Novel Linear and Hyperbranched Polythiophene Derivatives Containing Diketopyrrolopyrroles as Linking Groups

2015 ◽  
Vol 1771 ◽  
pp. 213-219
Author(s):  
Sheng-Hsiung Yang ◽  
Chia-Hao Hsieh
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Power Conversion ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
Molecular Weights ◽  
Active Layers ◽  
Film State

ABSTRACTThe goal of this research is to synthesize novel linear and hyperbranched polythiophene derivatives containing diketopyrrolopyrrole (DPP) as linking groups, and to investigate thermal, optical, electrochemical, and photovoltaic properties of those derivatives. Polymers with high regioregularity were synthesized via the Universal Grignard metathesis polymerization. Those linear or hyperbranched polythiophenes containing DPP bridging moieties showed higher molecular weights and better thermal stability compared with normal P3HT. The UV-vis absorption spectra of the DPP-containing polymers are similar to that of P3HT in film state, while they show distinct attenuation in fluorescent emission. Finally, all polymers were blended with PC61BM and used as active layers for fabrication of inverted solar devices. The devices based on those DPP-containing polythiophenes revealed the open-circuit voltage (VOC) of 0.55–0.58 V, the short-circuit current (JSC) of 8.62–16.21 mA/cm2, the fill factor (FF) of 36–41%, and the power conversion efficiency (PCE) of 1.73–3.74%.

scholarly journals Synthesis of Cyano-Substituted Conjugated Polymers for Photovoltaic Applications

Polymers ◽  
2019 ◽  
Vol 11 (5) ◽  
pp. 746 ◽  
Author(s):  
Mun Ho Yang ◽  
Ho Cheol Jin ◽  
Joo Hyun Kim ◽  
Dong Wook Chang
Keyword(s):  
Conjugated Polymers ◽  
Molecular Orbital ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Energy Levels ◽  
Coupling Reaction ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Strong Electron ◽  
Photovoltaic Properties

Three conjugated polymers, in which the electron-donating (D) 5-alkylthiophene-2-yl-substitued benzodithiophene was linked to three different electron-accepting (A) moieties, i.e., benzothiadiazole (BT), diphenylquinoxaline (DPQ), and dibenzophenazine (DBP) derivative via thiophene bridge, were synthesized using the Stille coupling reaction. In particular, the strong electron-withdrawing cyano (CN) group was incorporated into the A units BT, DPQ, and DBP to afford three D–A type target polymers PB–BTCN, PB–DPQCN, and PB–DBPCN, respectively. Owing to the significant contribution of the CN-substituent, these polymers exhibit not only low-lying energy levels of both the highest occupied molecular orbital and the lowest unoccupied molecular orbital, but also reduced bandgaps. Furthermore, to investigate the photovoltaic properties of polymers, inverted-type devices with the structure of ITO/ZnO/Polymer:PC71BM/MoO3/Ag were fabricated and analyzed. All the polymer solar cells based on the three cyano-substituted conjugated polymers showed high open-circuit voltages (Voc) greater than 0.89 V, and the highest power conversion efficiency of 4.59% was obtained from the device based on PB-BtCN with a Voc of 0.93 V, short-circuit current of 7.36 mA cm−2, and fill factor of 67.1%.

scholarly journals Preparation of Photoactive Transition-Metal Layered Double Hydroxides (LDH) to Replace Dye-Sensitized Materials in Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4384
Author(s):  
Sajid Naseem ◽  
Bianca R. Gevers ◽  
Frederick J. W. J. Labuschagné ◽  
Andreas Leuteritz
Keyword(s):  
Solar Cells ◽  
Layered Double Hydroxides ◽  
Short Circuit ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
X Ray ◽  
Dye Sensitized ◽  
Double Hydroxide ◽  
Double Hydroxides

This work highlights the use of Fe-modified MgAl-layered double hydroxides (LDHs) to replace dye and semiconductor complexes in dye-sensitized solar cells (DSSCs), forming a layered double hydroxide solar cell (LDHSC). For this purpose, a MgAl-LDH and a Fe-modified MgAl LDH were prepared. X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray (EDX) spectroscopy were used to analyze the structural properties, morphology, and success of the Fe-modification of the synthesized LDHs. Ultraviolet-visible (UV-Vis) absorption spectroscopy was used to analyze the photoactive behavior of these LDHs and compare it to that of TiO2 and dye-sensitized TiO2. Current-voltage (I–V) solar simulation was used to determine the fill factor (FF), open circuit voltage (VOC), short circuit current (ISC), and efficiency of the LDHSCs. It was shown that the MgFeAl-LDH can act as a simultaneous photoabsorber and charge separator, effectively replacing the dye and semiconductor complex in DSSCs and yielding an efficiency of 1.56%.

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