Random electric field strength distribution in lead-free relaxor ferroelectrics caused by barium content

2020 ◽  
Vol 13 (03) ◽  
pp. 2050012
Author(s):  
Evgeniy Dul’kin ◽  
Jiwei Zhai ◽  
Michael Roth
Keyword(s):  
Field Strength ◽  
Curie Temperature ◽  
Random Field ◽  
Electric Fields ◽  
Bias Field ◽  
Relaxor Ferroelectrics ◽  
Strength Distribution ◽  
Threshold Field ◽  
Shape Effect ◽  
Exponential Law

Curie temperature behavior of BaxSr[Formula: see text]TiO3 ferroelectrics ceramic ([Formula: see text]) in dependence on bias field is detected by means of acoustic emission. Curie temperature exhibits nontrivial V-shape effect with threshold field of 0.3[Formula: see text]kV/cm, equivalent to random electric fields strength. This random field strength is compared with those in BaxSr[Formula: see text]TiO3 relaxor ferroelectrics ([Formula: see text], 0.7, 0.8) obtained previously, as well as with those determined from mean domain sizes in BaxSr[Formula: see text]Nb2O6 relaxor ferroelectrics ([Formula: see text], 0.39, 0.6). It is estimated that the random field strength of Ba[Formula: see text]Sr[Formula: see text]TiO3 is 30 times stronger than those of Ba[Formula: see text]Sr[Formula: see text]Nb2O6 and it is shown that the random field strengths of both BaxSr[Formula: see text]TiO3 and BaxSr[Formula: see text]Nb2O6 obey the same exponential law in dependence on barium content.

Comparison of random field strengths in (1-x)SrTiO3-xBiFeO3 and (1-x)SrTiO3-xBaTiO3 relaxor ferroelectrics by means of acoustic emission

2020 ◽  
Vol 92 (2) ◽  
pp. 20401
Author(s):  
Evgeniy Dul'kin ◽  
Michael Roth
Keyword(s):  
Acoustic Emission ◽  
Random Field ◽  
Electric Fields ◽  
Bias Field ◽  
Relaxor Ferroelectrics ◽  
External Bias ◽  
Field Strengths

In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x = 0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.

scholarly journals Embryonic fibroblast motility and orientation can be influenced by physiological electric fields.

1984 ◽  
Vol 98 (1) ◽  
pp. 296-307 ◽  
Author(s):  
C A Erickson ◽  
R Nuccitelli
Keyword(s):  
Field Strength ◽  
Electric Fields ◽  
Threshold Field ◽  
Voltage Gradient ◽  
Ion Currents ◽  
Embryonic Cells ◽  
Field Lines ◽  
Epithelial Layers ◽  
Embryonic Fibroblast

Epithelial layers in developing embryos are known to drive ion currents through themselves that will, in turn, generate small electric fields within the embryo. We hypothesized that the movement of migratory embryonic cells might be guided by such fields, and report here that embryonic quail somite fibroblast motility can be strongly influenced by small DC electric fields. These cells responded to such fields in three ways: (a) The cells migrated towards the cathodal end of the field by extending lamellipodia in that direction. The threshold field strength for this galvanotaxis was between 1 and 10 mV/mm when the cells were cultured in plasma. (b) The cells oriented their long axes perpendicular to the field lines. The threshold field strength for this response for a 90-min interval in the field was 150 mV/mm in F12 medium and between 50 and 100 mV/mm in plasma. (c) The cells elongated under the influence of field strengths of 400 mV/mm and greater. These fibroblasts were therefore able to detect a voltage gradient at least as low as 0.2 mV across their width. Electric fields of at least 10-fold larger in magnitude than this threshold field have been detected in vivo in at least one vertebrate thus far, so we believe that these field effects encompass a physiological range.

scholarly journals Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

2018 ◽  
Vol 9 ◽  
pp. 1544-1549 ◽  
Author(s):  
Margarita A Kurochkina ◽  
Elena A Konshina ◽  
Daria Khmelevskaia
Keyword(s):  
Quantum Dots ◽  
Liquid Crystals ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Electric Fields ◽  
Dielectric Anisotropy ◽  
Vertical Position ◽  
Decay Times ◽  
Pl Intensity

We have experimentally investigated the effect of the reorientation of a nematic liquid crystal (LC) in an electric field on the photoluminescence (PL) of CdSe/ZnS semiconductor quantum dots (QDs). To the LC with positive dielectric anisotropy, 1 wt % QDs with a core diameter of 5 nm was added. We compared the change of PL intensity and decay times of QDs in LC cells with initially planar or vertically orientated molecules, i.e., in active or passive LC matrices. The PL intensity of the QDs increases four-fold in the active LC matrix and only 1.6-fold in the passive LC matrix without reorientation of the LC molecules. With increasing electric field strength, the quenching of QDs luminescence occurred in the active LC matrix, while the PL intensity did not change in the passive LC matrix. The change in the decay time with increasing electric field strength was similar to the behavior of the PL intensity. The observed buildup in the QDs luminescence can be associated with the transfer of energy from LC molecules to QDs. In a confocal microscope, we observed the increase of particle size and the redistribution of particles in the active LC matrix with the change of the electric field strength. At the same time, no significant changes occurred in the passive LC matrix. With the reorientation of LC molecules from the planar in vertical position in the LC active matrix, quenching of QD luminescence and an increase of the ion current took place simultaneously. The obtained results are interesting for controlling the PL intensity of semiconductor QDs in liquid crystals by the application of electric fields.

X-Radiolysis Ion Yields and Electron Ranges in Liquid Xenon, Krypton, and Argon: Effect of Electric Field Strength

1973 ◽  
Vol 51 (5) ◽  
pp. 641-649 ◽  
Author(s):  
Maurice G. Robinson ◽  
Gordon R. Freeman
Keyword(s):  
Field Strength ◽  
Gas Phase ◽  
Electric Fields ◽  
Zero Field ◽  
Energy Effect ◽  
Secondary Electrons ◽  
Total Ionization ◽  
Field Dependent ◽  
Free Ion ◽  
Ion Yields

X-Radiolysis ion yields were measured at electric fields between 1 and 60 kV/cm in argon at 87 °K, krypton at 148 °K, and xenon at 183 °K. The results were analyzed according to a theoretical model to obtain the total ion yields Gtot,the free ion yields at zero field strength Gfi0 and the most probable penetration ranges b of the secondary electrons in the liquids. The respective values were: Ar, 7.3, 2.9, 1330 Å; Kr, 13.0, 5.8, 880 Å; Xe, 13.7, 7.0, 720 Å. The total ionization yields in these substances are greater in the liquid than in the gas phase, probably due to smaller ionization potentials in the condensed phase (polarization energy effect). Field dependent electron mobilities are also reported.

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