Influence of Sb2O3 doping on the sintering and polarization characteristics of PbTiO3 ceramic materials

2021 ◽  
pp. 2150007
Author(s):  
Chol-Nam Ri ◽  
Jong-Su Ri ◽  
Kwang-Ho Ju
Keyword(s):  
Stress Concentration ◽  
Piezoelectric Ceramic ◽  
Vacancy Concentration ◽  
Ceramic Materials ◽  
Oxygen Vacancy Concentration ◽  
Ceramic Processing ◽  
Spontaneous Strain ◽  
Fine Grain ◽  
Polarization Characteristics ◽  
Pbtio3 Ceramic

In this paper, the effect of Sb2O3 doping on the sintering and polarization stability of PbTiO3 ceramics was investigated. The Sb2O3-doped PbTiO3 ceramic materials were prepared viaa conventional piezoelectric ceramic processing. The results showed that the as-prepared PbTiO3 ceramics exhibit a good sintering stability without cracking during sintering because of reducing spontaneous strain stemmed from decrease the tetragonal degree of PbTiO3 by Sb2O3 doping. Furthermore, the polarization stability of Sb2O3-doped PbTiO3 ceramics was considerably enhanced by the relaxation of strain and stress concentration during poling stemmed from the formation of good microstructure with fine grain and high density, and by decreasing the loss stemmed from reduction of oxygen vacancy concentration due to the substitution of Sb[Formula: see text] ions for Ti[Formula: see text] ions under a polarization condition with temperature of 130–150[Formula: see text]C and applied electric field of 4.5–5.5 kV/mm, and its yield of polarization is achieved ca. 80%.

The Method of Eliminating Banded Structure and the Effects of Banded Structure on the Transverse Properties in 20G Steel

2013 ◽  
Vol 347-350 ◽  
pp. 1171-1175 ◽  
Author(s):  
Bin Wang ◽  
Hong Mei Hu ◽  
Cui Zhou
Keyword(s):  
Heat Treatment ◽  
Grain Size ◽  
Stress Concentration ◽  
Base Metal ◽  
Metallic Inclusion ◽  
Banded Structure ◽  
Grain Sizes ◽  
Fine Grain ◽  
Treatment Processes ◽  
Metallic Inclusions

The transverse properties were inferior to the longitudinal properties for the existence of banded structure in 20G steel. In order to eliminate the banded structure and improve the transverse performance of 20G steel, different heat treatment processes were adopted. The results showed that conventional normalizing could reduce the banded structure and refine the grain sizes. When 20G was heated with 10°C/min heating rated and then held at 920°C for 2h, the banded structure in the steel was almost eliminated and the microstructure was homogeneous with fine grain size, the strength increased by 14%. The non-metallic inclusion and carbide in the microstructure leaded to stress concentration and separation with the base metal. To some extent, heat treatment can improve the distribution and form of non-metallic inclusions.

scholarly journals Combined iDPC and EELS analyses for quantifying oxygen vacancy concentration in LSMO

2021 ◽  
Vol 27 (S1) ◽  
pp. 1196-1197
Author(s):  
Aubrey Penn ◽  
Sanaz Koohfar ◽  
Divine Kumah ◽  
James LeBeau
Keyword(s):  
Oxygen Vacancy ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration

scholarly journals Effects on Microstructure and Ionic Conductivity of the Co-Doping with Strontium and Samarium of Ceria with Constant Oxygen Vacancy Concentration

Solids ◽  
2021 ◽  
Vol 2 (4) ◽  
pp. 341-370
Author(s):  
Toby Sherwood ◽  
Richard T. Baker
Keyword(s):  
Oxygen Vacancy ◽  
Grain Boundary ◽  
Vacancy Concentration ◽  
Synthesis Method ◽  
Ionic Conductivities ◽  
Solubility Limit ◽  
Material Structure ◽  
Oxygen Vacancy Concentration ◽  
Co Doping ◽  
Phase Pure

Partially substituted cerias are attractive materials for use as electrolytes in intermediate-temperature solid oxide fuel cells (SOFCs). Ceria doped with Sm or Gd has been found to have high ionic conductivities. However, there is interest in whether doping with multiple elements could lead to materials with higher ionic conductivities. The present study looks at the effects of co-doping Sr and Sm in ceria. A compositional series, Ce0.8+xSm0.2−2xSrxO2−δ (with x = 0–0.08), designed to have a constant oxygen vacancy concentration, was successfully prepared using the citrate–nitrate complexation method. A solubility limit of ~5 cation% Sr was found to impact material structure and conductivity. For phase-pure materials, with increasing Sr content, sinterability increased slightly and intrinsic conductivity decreased roughly linearly. The grain boundaries of phase-pure materials showed only a very small blocking effect, linked to the high-purity synthesis method employed, while at high %Sr, they became more blocking due to the presence of a SrCeO3 impurity. Grain capacitances were found to be 50–60 pF and grain boundary capacitances, 5–50 nF. The variation in the bulk capacitance with Sr content was small, and the variation in grain boundary capacitance could be explained by the variation in grain size. Slight deviations at high %Sr were attributed to the SrCeO3 impurity. In summary, in the absence of deleterious effects due to poor microstructure or impurities, such as Si, there is no improvement in conductivity on co-doping with Sr and Sm.

Magnetic State of Ba-Doped Manganites Depending on the Oxygen Vacancy Concentration

2002 ◽  
Vol 233 (2) ◽  
pp. 321-330 ◽  
Author(s):  
S.V. Trukhanov ◽  
N.V. Kasper ◽  
I.O. Troyanchuk ◽  
H. Szymczak ◽  
K. B�rner
Keyword(s):  
Oxygen Vacancy ◽  
Magnetic State ◽  
Vacancy Concentration ◽  
Oxygen Vacancy Concentration ◽  
Doped Manganites

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

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