RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI
Keyword(s):
We review recent developments in magnetic tunnel junctions with perpendicular easy axis (p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of material systems such as rare-earth/transition metal alloys, L10-ordered ( Co, Fe )– Pt alloys, Co /( Pd, Pt ) multilayers, and ferromagnetic-alloy/oxide stacks have been proposed as electrodes in p-MTJs. Among them, p-MTJs with single or double ferromagnetic-alloy/oxide stacks, particularly CoFeB–MgO , were shown to have high potential to satisfy major requirements for integration.
2015 ◽
Vol 54
(4S)
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pp. 04DM06
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2016 ◽
Vol 52
(7)
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pp. 1-4
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2014 ◽
Vol 61
(4)
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pp. 1710-1716
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2012 ◽
Vol 59
(3)
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pp. 819-826
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Keyword(s):
2015 ◽
Vol 396
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pp. 333-337
Keyword(s):