RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240003 ◽  
Author(s):  
SHOJI IKEDA ◽  
HIDEO SATO ◽  
MICHIHIKO YAMANOUCHI ◽  
HUADONG GAN ◽  
KATSUYA MIURA ◽  
...  

We review recent developments in magnetic tunnel junctions with perpendicular easy axis (p-MTJs) for nonvolatile very large scale integrated circuits (VLSIs). So far, a number of material systems such as rare-earth/transition metal alloys, L10-ordered ( Co, Fe )– Pt alloys, Co /( Pd, Pt ) multilayers, and ferromagnetic-alloy/oxide stacks have been proposed as electrodes in p-MTJs. Among them, p-MTJs with single or double ferromagnetic-alloy/oxide stacks, particularly CoFeB–MgO , were shown to have high potential to satisfy major requirements for integration.

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DM06 ◽  
Author(s):  
Sadahiko Miura ◽  
Hiroaki Honjo ◽  
Keizo Kinoshita ◽  
Keiichi Tokutome ◽  
Hiroaki Koike ◽  
...  

2014 ◽  
Vol 61 (4) ◽  
pp. 1710-1716 ◽  
Author(s):  
Daisuke Kobayashi ◽  
Yuya Kakehashi ◽  
Kazuyuki Hirose ◽  
Shinobu Onoda ◽  
Takahiro Makino ◽  
...  

2012 ◽  
Vol 59 (3) ◽  
pp. 819-826 ◽  
Author(s):  
Yue Zhang ◽  
Weisheng Zhao ◽  
Yahya Lakys ◽  
Jacques-Olivier Klein ◽  
Joo-Von Kim ◽  
...  

2011 ◽  
Vol 99 (10) ◽  
pp. 102502 ◽  
Author(s):  
Wei-Gang Wang ◽  
Stephen Hageman ◽  
Mingen Li ◽  
Sunxiang Huang ◽  
Xiaoming Kou ◽  
...  

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