Effects of Si Doping on the Structural, Electronic and Optical Properties of Barium Chalcogenide BaS: A First-Principles Study

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050014
Author(s):  
H. Absike ◽  
H. Labrim ◽  
B. Hartiti ◽  
H. Ez-Zahraouy
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Original Structure ◽  
Functional Theory ◽  
Electron Charge Density ◽  
Electronic And Optical Properties ◽  
Charge Densities ◽  
The Density Functional Theory ◽  
Si Doped

In this work, the structural, electronic and optical properties of Si-doped barium chalcogenide [barium sulfide (BaS)] with different Si concentrations ([Formula: see text]) are investigated by the first-principles calculations based on the density functional theory (DFT). The band structures, charge densities and complex dielectric functions of the pure as well as Si-doped BaS were presented and analyzed in detail using TB-mBJ approach by WIEN2k package. It is found that silicon concentration can control the bandgap by reducing it to values around 1.4[Formula: see text]eV and 1.6[Formula: see text]eV for 12.5% and 6.25% of Si-doped BaS, respectively. The electron charge density indicates the ionic bonding between silicon and sulfur atoms due to the high electronegativity between them. In fact, the results show that the absorption peaks of Si-doped BaS are enhanced compared with pure BaS. These results suggest that the Ba[Formula: see text]SixS original structure displays excellent physical properties thereby revealing that it is a promising material in advanced optoelectronic and solar cell applications.

First-Principles Calculations on Structural, Electronic, and Optical Properties of 2H-CuAlO2

2011 ◽  
Vol 197-198 ◽  
pp. 487-490 ◽  
Author(s):  
Li Ping Feng ◽  
Zheng Tang Liu ◽  
Qi Jun Liu
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Band Structure ◽  
First Principles ◽  
Density Functional ◽  
Lattice Parameters ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
Charge Densities ◽  
Densities Of States

Structural, electronic and optical properties of 2H-CuAlO2 were computed, using the plane-wave ultrasoft pseudopotential technique based on the first-principles density functional theory (DFT). The equilibrium lattice parameters, band structure, densities of states (DOS) and charge densities of 2H-CuAlO2 have been obtained. The equilibrium lattice parameters, band structure and DOS are found to be in good agreement with the available experimental and calculational values. The charge densities and the chemical bonding of 2H-CuAlO2 are analyzed, which show that bonding between Cu and O is mainly covalent due to Cu 3d and O 2p hybridization and that bonding between Al and O is mainly ionic. The complex dielectric function, refractive index and absorption coefficient of 2H-CuAlO2 have been predicted. The calculated static dielectric constant and static refractive index of 2H-CuAlO2 is 7.1 and 2.66, respectively.

First-Principles Study of Electronic and Optical Properties in Wurtzite ZnCoO Alloys

2013 ◽  
Vol 333-335 ◽  
pp. 1847-1852
Author(s):  
Ming Zhu Li ◽  
Li Mei Song ◽  
Shan Wang
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Optical Constants ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
The Density Functional Theory ◽  
Co Concentration

We perform a first-principles simulation to research the electronic and optical properties of wurtzite Zn1-xCoxO. The simulations are based on the Perdew-Burke-Ernzerhof form of generalized gradient approximation within the density functional theory. Calculations are carried out in different concentrations. With increasing Co concentration, the band gap of Zn1-xCoxO decreases due to the shift of valence band. Besides, it is shown that the insertion of Co atom leads to redshift of the optical absorption edge. Meanwhile, the optical constants of pure ZnO and ZnCoO alloys such as loss function, refractive index and reflectivity, are discussed.

scholarly journals First-principles calculations to investigate structural, electronic and optical properties of (AlSb)m/(GaSb)n superlattices

2020 ◽  
Vol 38 (2) ◽  
pp. 320-327
Author(s):  
M. Caid ◽  
D. Rached
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Orbital Method ◽  
Full Potential ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
The Density Functional Theory ◽  
Direct Band

AbstractThe structural, electronic and optical properties of (AlSb)m/(GaSb)n (m-n: 1-1, 2-2, 1-3 and 3-1) superlattices are investigated within the density functional theory (DFT) by using the last version of the first principles full potential linear muffin tin orbital method (FP-LMTO) as implemented in LmtART 7.0 code. The exchange and correlation potential is treated by the local density approximation (LDA) for the total energy calculations. Our calculations of the band structure show that the superlattices (n ≠ 1) have a direct band gap Γ-Γ. The optical constants, including the dielectric function ϵ(w), the refractive index n(w) and the reflectivity R(w) are calculated and discussed.

Electronic and optical properties of zinc-blende GeC by first principles study

2015 ◽  
Vol 29 (20) ◽  
pp. 1550103
Author(s):  
Jinhui Zhai ◽  
Jinguang Zhai ◽  
Ajun Wan
Keyword(s):  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Dielectric Constants ◽  
Electronic And Optical Properties ◽  
Optical Functions ◽  
Zinc Blende ◽  
The Density Functional Theory ◽  
Valence Bands ◽  
Energy Dependent

The electronic and optical properties of zinc-blende (zb)[Formula: see text]GeC have been investigated using first principles calculations based on the density functional theory (DFT). The obtained band gap of zb–GeC is 2.30[Formula: see text]eV by means of Heyd–Scuseria–Ernzerhof (HSE) functional. We have discussed the energy-dependent optical functions including dielectric constants, refractive index, absorption, reflectivity, and energy-loss spectrum in detail. The results reveal that zb–GeC has a higher static dielectric constant compared with that of zb–SiC. The optical functions are mainly associated with the interband transitions from the occupied valence bands (VBs) Ge[Formula: see text][Formula: see text] and C[Formula: see text][Formula: see text] states to Ge[Formula: see text][Formula: see text], [Formula: see text] and C[Formula: see text][Formula: see text] states of the unoccupied conduction bands (CBs).

First Principles Calculations of Electronic Structure and Optical Properties of Cu-Doped SnS2

2013 ◽  
Vol 373-375 ◽  
pp. 1965-1969
Author(s):  
Kun Nan Qin ◽  
Ling Zhi Zhao ◽  
Yong Mei Liu ◽  
Fang Fang Li ◽  
Chao Yang Cui
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Optical Absorption Coefficient ◽  
Impurity Level ◽  
First Principles Calculations ◽  
Absorption Region ◽  
Functional Theory ◽  
The Density Functional Theory

The electronic structure and optical properties of Cu-doped SnS2with Sn-substituted content of 0, 12.5 and 37.5 at.% were successfully calculated by the first principles plane-wave pseudopotentials based on the density functional theory. It is found that the intermediate belts appear near the Fermi level and the energy band gap becomes narrower after the doping of the Cu atoms. The absorption peaks show a remarkable redshift and the absorption region broadens relatively after introducing acceptor impurity level. When Sn atoms of 37.5 at% were substituted by Cu, the optical absorption coefficient is significantly improved in the frequency range below 5.58 eV and over 8.13 eV.

First Principles Studies on Structural, Electronic and Optical Properties of SnO2

2014 ◽  
Vol 900 ◽  
pp. 203-208 ◽  
Author(s):  
Ting Ting Shao ◽  
Fu Chun Zhang ◽  
Wei Hu Zhang
Keyword(s):  
Experimental Data ◽  
Density Functional Theory ◽  
Optical Properties ◽  
Plane Wave ◽  
Qualitative Analysis ◽  
First Principles ◽  
Density Functional ◽  
Density Of State ◽  
Functional Theory ◽  
Electronic And Optical Properties

The structural, electronic, and optical properties of rutile-type SnO2 are studied by plane-wave pseudopotential density functional theory (DFT) with GGA, LDA, B3LYP and PBE0 respectively. The computing results show that the band gap getting from PBE0 and B3LYP is much more consistent with the available experimental data than that from GGA and LDA, no matter what the latter use ultra-soft pseudopotential or norm conserving pseudopotential. However, the density of state, real part and imaginary part of dielectric function calculating from every type is basically similar in qualitative analysis.

SiGe/h-BN heterostructure with inspired electronic and optical properties: a first-principles study

2016 ◽  
Vol 4 (42) ◽  
pp. 10082-10089 ◽  
Author(s):  
Xianping Chen ◽  
Xiang Sun ◽  
D. G. Yang ◽  
Ruishen Meng ◽  
Chunjian Tan ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Optical Properties ◽  
First Principles ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Electronic And Optical Properties ◽  
First Principles Study

The structure along with the electronic and optical properties of a SiGe/BN monolayer heterostructure were theoretically researched using density functional theory calculations.

First-principles study on electronic structure and optical properties of In-doped GaN

2014 ◽  
Vol 13 (08) ◽  
pp. 1450070 ◽  
Author(s):  
Xingxiang Ruan ◽  
Fuchun Zhang ◽  
Weihu Zhang
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
First Principles ◽  
Density Functional ◽  
Visible Region ◽  
Solar Spectrum ◽  
Potential Method ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structure Density

The In -doped GaN is investigated by first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The band structure, electronic structure, density of states and optical properties are investigated. The results indicate that the band-gap becomes narrower and the absorption edge of optical properties is red-shifted with the increase in In -doped concentration. Meanwhile, the visible region has strong absorption properties, and the significant absorption peaks are observed near 3.0 eV and 6.1 eV. The other peaks correspond to the wavelength of absorption spectra from the ultraviolet portion extending to the infrared portion, which almost covers the entire solar spectrum. The studied results show that In -doped GaN can be applied as solar cell and transparent conductivity material.

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