ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

2010 ◽  
Vol 3 (5) ◽  
pp. 051102 ◽  
Author(s):  
Aswin Hongsingthong ◽  
Taweewat Krajangsang ◽  
Ihsanul Afdi Yunaz ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Oxide Films ◽  
Transparent Conductive Oxide ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Thin Film Silicon ◽  
Conductive Oxide ◽  
Very High

scholarly journals ZnO transparent conductive oxide for thin film silicon solar cells

2010 ◽  
Author(s):  
T. Söderström ◽  
D. Dominé ◽  
A. Feltrin ◽  
M. Despeisse ◽  
F. Meillaud ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Transparent Conductive Oxide ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Conductive Oxide

State-of-the-art mid-frequency sputtered ZnO films for thin film silicon solar cells and modules

2003 ◽  
Vol 442 (1-2) ◽  
pp. 158-162 ◽  
Author(s):  
Joachim Müller ◽  
Gunnar Schöpe ◽  
Oliver Kluth ◽  
Bernd Rech ◽  
Volker Sittinger ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
State Of The Art ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Thin Film Silicon

High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process

2012 ◽  
Vol 1426 ◽  
pp. 27-32
Author(s):  
T. Zimmermann ◽  
A. J. Flikweert ◽  
T. Merdzhanova ◽  
J. Woerdenweber ◽  
A. Gordijn ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Plasma Sources ◽  
Thin Film Silicon ◽  
Very High ◽  
Linear Plasma

ABSTRACTThin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.

Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells

2012 ◽  
Vol 258 (16) ◽  
pp. 5943-5946 ◽  
Author(s):  
Ke Tao ◽  
Yun Sun ◽  
Hongkun Cai ◽  
Dexian Zhang ◽  
Ke Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Room Temperature ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Thin Film Silicon ◽  
Doped Zno

Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

2011 ◽  
Vol 98 (16) ◽  
pp. 163503 ◽  
Author(s):  
Milan Vanecek ◽  
Oleg Babchenko ◽  
Adam Purkrt ◽  
Jakub Holovsky ◽  
Neda Neykova ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Three Dimensional ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Very High

Properties of thin-film silicon solar cells at very high irradiance

2012 ◽  
Vol 358 (17) ◽  
pp. 2202-2205 ◽  
Author(s):  
Steve Reynolds ◽  
Suman Anand ◽  
Amjad Meftah ◽  
Vladimir Smirnov
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Irradiance ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Very High
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