Fabrication of thin film silicon solar cells on plastic substrate by very high frequency PECVD

2010 ◽  
Vol 94 (9) ◽  
pp. 1534-1541 ◽  
Author(s):  
J.K. Rath ◽  
M. Brinza ◽  
Y. Liu ◽  
A. Borreman ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Frequency ◽  
Plastic Substrate ◽  
Silicon Solar Cells ◽  
Very High Frequency ◽  
Thin Film Silicon ◽  
Very High

Recent advances in very high frequency plasma enhanced CVD process for the fabrication of thin film silicon solar cells

2009 ◽  
Vol 517 (17) ◽  
pp. 4758-4761 ◽  
Author(s):  
Jatindra K. Rath ◽  
Yanchao Liu ◽  
Monica Brinza ◽  
Arjan Verkerk ◽  
Caspar van Bommel ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Frequency ◽  
Silicon Solar Cells ◽  
Very High Frequency ◽  
Plasma Enhanced Cvd ◽  
Recent Advances ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

scholarly journals Periodic textures for enhanced current in thin film silicon solar cells

2008 ◽  
Vol 1101 ◽  
Author(s):  
Franz-Josef Haug ◽  
Thomas Söderström ◽  
Oscar Cubero ◽  
Vanessa Terrazzoni-Daudrix ◽  
Xavier Niquille ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Periodic Structures ◽  
Plastic Substrate ◽  
Silicon Solar Cells ◽  
Sinusoidal Grating ◽  
Thin Film Silicon ◽  
Wide Range ◽  
The Individual ◽  
High Degree

AbstractFor thin film silicon solar cells it is vital to increase the optical path of light in the absorber because this allows for thinner cells with better stability and higher production throughput. We discuss the effect of periodically textured interfaces for the case of thin film silicon solar cells in n-i-p configuration using embossed plastic substrate which allows us studying the effect of a wide range of random or periodic textures. Due to the moderate thickness of the individual layers the texture is carried into each interface with a high degree of conformity even for the front contact which is the last layer. Solar cells on periodic structures show excellent performance; in a microcrystalline cell on a simple sinusoidal grating we achieved a gain in current density of 30%. Furthermore, the periodicity serves as a useful tool for the study of light management because the underlying phenomena like diffraction or grating coupling to plasma excitations of the metallic back reflector are governed by a relatively low number of well defined parameters like the periodicity and the amplitude of the grating.

High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process

2012 ◽  
Vol 1426 ◽  
pp. 27-32
Author(s):  
T. Zimmermann ◽  
A. J. Flikweert ◽  
T. Merdzhanova ◽  
J. Woerdenweber ◽  
A. Gordijn ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Plasma Sources ◽  
Thin Film Silicon ◽  
Very High ◽  
Linear Plasma

ABSTRACTThin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.

scholarly journals A novel structured plastic substrate for light confinement in thin film silicon solar cells by a geometric optical effect

2012 ◽  
Vol 358 (17) ◽  
pp. 2308-2312 ◽  
Author(s):  
M.M. de Jong ◽  
J.K. Rath ◽  
R.E.I. Schropp ◽  
P.J. Sonneveld ◽  
G.L.A.M. Swinkels ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Plastic Substrate ◽  
Silicon Solar Cells ◽  
Optical Effect ◽  
Light Confinement ◽  
Thin Film Silicon

Nanostructured three-dimensional thin film silicon solar cells with very high efficiency potential

2011 ◽  
Vol 98 (16) ◽  
pp. 163503 ◽  
Author(s):  
Milan Vanecek ◽  
Oleg Babchenko ◽  
Adam Purkrt ◽  
Jakub Holovsky ◽  
Neda Neykova ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Three Dimensional ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Very High

Properties of thin-film silicon solar cells at very high irradiance

2012 ◽  
Vol 358 (17) ◽  
pp. 2202-2205 ◽  
Author(s):  
Steve Reynolds ◽  
Suman Anand ◽  
Amjad Meftah ◽  
Vladimir Smirnov
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Irradiance ◽  
Silicon Solar Cells ◽  
Thin Film Silicon ◽  
Very High

ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

2010 ◽  
Vol 3 (5) ◽  
pp. 051102 ◽  
Author(s):  
Aswin Hongsingthong ◽  
Taweewat Krajangsang ◽  
Ihsanul Afdi Yunaz ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Oxide Films ◽  
Transparent Conductive Oxide ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Thin Film Silicon ◽  
Conductive Oxide ◽  
Very High

Analysis of Plasma Properties and Deposition of Amorphous Silicon Alloy Solar Cells Using Very High Frequency Glow Discharge

1999 ◽  
Vol 557 ◽  
Author(s):  
B. Yan ◽  
J. Yang ◽  
S. Guha ◽  
A. Gallagher
Keyword(s):  
Solar Cells ◽  
High Frequency ◽  
Lower Energy ◽  
Ionic Current ◽  
Ion Bombardment ◽  
Half Width ◽  
Rf Plasma ◽  
Very High Frequency ◽  
Very High ◽  
Ionic Energy

AbstractPositive ionic energy distributions in modified very-high-frequency (MVHF) and radio frequency (RF) glow discharges were measured using a retarding field analyzer. The ionic energy distribution for H2 plasma with 75 MHz excitation at a pressure of 0.1 torr has a peak at 22 eV with a half-width of about 6 eV. However, with 13.56 MHz excitation, the peak appears at 37 eV with a much broader half-width of 18 eV. The introduction of SiH4 to the plasma shifts the distribution to lower energy. Increasing the pressure not only shifts the distribution to lower energy but also broadens the distribution. In addition, the ionic current intensity to the substrate is about five times higher for MVHF plasma than for RF plasma. In order to study the effect of ion bombardment, the deposition of a-Si alloy solar cells using MVHF was investigated in detail at different pressures and external biases. Lowering the pressure and negatively biasing the substrate increases ion bombardment energy and results in a deterioration of cell performance. It indicates that ion bombardment is not beneficial for making solar cells using MVHF. By optimizing the deposition conditions, a 10.8% initial efficiency of a-Si/a-SiGe/SiGe triple-junction solar cell was achieved at a deposition rate of 0.6 nm/sec.

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