Room Temperature cw Operated Superluminescent Diodes for Optical Pumping of Nd: YAG Laser

1976 ◽  
Vol 15 (11) ◽  
pp. 2191-2194 ◽  
Author(s):  
Kuniakira Iwamoto ◽  
Isao Hino ◽  
Shohei Matsumoto ◽  
Koji Inoue
2021 ◽  
Vol 7 (21) ◽  
pp. eabf8049
Author(s):  
Rui Su ◽  
Sanjib Ghosh ◽  
Timothy C. H. Liew ◽  
Qihua Xiong

Strong light-matter interaction enriches topological photonics by dressing light with matter, which provides the possibility to realize active nonlinear topological devices with immunity to defects. Topological exciton polaritons—half-light, half-matter quasiparticles with giant optical nonlinearity—represent a unique platform for active topological photonics. Previous demonstrations of exciton polariton topological insulators demand cryogenic temperatures, and their topological properties are usually fixed. Here, we experimentally demonstrate a room temperature exciton polariton topological insulator in a perovskite zigzag lattice. Polarization serves as a degree of freedom to switch between distinct topological phases, and the topologically nontrivial polariton edge states persist in the presence of onsite energy perturbations, showing strong immunity to disorder. We further demonstrate exciton polariton condensation into the topological edge states under optical pumping. These results provide an ideal platform for realizing active topological polaritonic devices working at ambient conditions, which can find important applications in topological lasers, optical modulation, and switching.


2014 ◽  
Vol 11 (3) ◽  
pp. 1113-1121
Author(s):  
Baghdad Science Journal

In this research , design and study a (beam expander) for the Nd – YAG laser with (1.06 ?m) Wavelength has been studied at 5X zoom with narrow diversion in the room temperature. by using (ZEMAX) to study the system. Evaluate its performance via (ZEMAX) outputs, as bright Spot Diagram via (RMS), Ray Fan Plot, Geometric Encircled Energy and the value of Focal shift. Then study the effect of field of view on the outputs in the room temperature.


2017 ◽  
Vol 47 (9) ◽  
pp. 831-834 ◽  
Author(s):  
S D Velikanov ◽  
E M Gavrishchuk ◽  
N G Zakharov ◽  
V I Kozlovsky ◽  
Yu V Korostelin ◽  
...  

Author(s):  
В.Я. Алешкин ◽  
Н.В. Байдусь ◽  
А.А. Дубинов ◽  
К.Е. Кудрявцев ◽  
С.М. Некоркин ◽  
...  

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.


Author(s):  
М.В. Фетисова ◽  
А.А. Корнев ◽  
А.С. Букатин ◽  
Н.А. Филатов ◽  
И.Е. Елисеев ◽  
...  

The paper demonstrates the possibility of using microdisk lasers 10 µm in diameter with an active region based on InAs/InGaAs quantum dots synthesized on GaAs substrates for biodetection. As a detectable object we used chimeric monoclonal antibodies to the CD20 protein covalently attached to the surface of microdisk lasers operating under optical pumping at room temperature in an aqueous medium. It was shown that the attached secondary antibodies cause an increase in the threshold power of lasing and also to an increase in the half-width of the resonant laser line.


2001 ◽  
Author(s):  
I.T. Sorokina ◽  
S. Naumov ◽  
E. Sorokin ◽  
E. Wintner ◽  
A.V. Shestakov

1994 ◽  
Vol 339 ◽  
Author(s):  
I. Akasaki ◽  
H. Amano

ABSTRACTHigh-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.


Sign in / Sign up

Export Citation Format

Share Document