Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization

ABSTRACTWe have investigated the dependence of electrical and material properties of buried CoSi2 layers on Co+ implantation and annealing conditions. The results indicated that the electrical resistivity and crystalline quality of the implanted buried CoSi2 layers depend strongly on the implantation temperature. CoSi2 layers with the lowest resistivity and best crystalline quality (Xmin as low as 3.6%) were obtained from samples implanted at 300°C-400°C. Implantation at higher temperatures (e.g., 580°C) produced cobalt disilicide layers with significantly higher electrical resistivity and a Xmin of about 10.7%.

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The crystalline quality of Si films prepared by thermal- and photo-CVD at low temperatures

Korean Journal of Chemical Engineering ◽

10.1007/bf02705867 ◽

1995 ◽

Vol 12 (5) ◽

pp. 593-596

Author(s):

Chan-Hwa Chung ◽

Jae Hyun Han ◽

Shi-Woo Rhee ◽

Sang Heup Moon

Keyword(s):

Low Temperatures ◽

Crystalline Quality ◽

Si Films

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Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques

Applied Physics Letters ◽

10.1063/1.90564 ◽

1979 ◽

Vol 34 (1) ◽

pp. 76-78 ◽

Cited By ~ 97

Author(s):

S. S. Lau ◽

S. Matteson ◽

J. W. Mayer ◽

P. Revesz ◽

J. Gyulai ◽

...

Keyword(s):

Ion Implantation ◽

Crystalline Quality ◽

Implantation Techniques

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Improvement of crystalline quality of epitaxial silicon-on-sapphire by ion implantation and furnace regrowth

Solid-State Electronics ◽

10.1016/0038-1101(80)90142-2 ◽

1980 ◽

Vol 23 (7) ◽

pp. 803-806 ◽

Cited By ~ 17

Author(s):

I. Golecki ◽

M-A. Nicolet

Keyword(s):

Ion Implantation ◽

Crystalline Quality ◽

Epitaxial Silicon

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Modifying Crystallographic Orientations of Polycrystalline Si Films Using Ion Channeling

MRS Proceedings ◽

10.1557/proc-35-727 ◽

1984 ◽

Vol 35 ◽

Cited By ~ 2

Author(s):

K. T-Y. Kung ◽

R. B. Ivepson ◽

R. Reif

Keyword(s):

Ion Implantation ◽

Solid Phase ◽

Chemical Vapor ◽

Silicon On Insulator ◽

Furnace Annealing ◽

Ion Channeling ◽

Amorphous Substrates ◽

Pressure Chemical ◽

Si Films ◽

Polycrystalline Silicon Films

ABSTRACTPolycrystalline silicon films 4800 Å thick deposited via low pressure chemical vapor deposition on oxidized silicon wafers have been amorphized by silicon ion implantation and subsequently recrystallized at 700°C. Due to channeling of the ions through grains whose <110> axes were sufficiently parallel to the beam, these grains survived the implantation step and acted as seed crystals for the solid-phase epitaxial regrowth of the film. This work suggests the feasibility of combining ion implantation and furnace annealing to generate large-grain, uniformly oriented polycrystal1ine films on amorphous substrates. It is a potential low-temperature silicon-on-insulator technology.

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Stimulated Orientation of Si Films by Solid‐Phase Recrystallization on a ZnS Film/Glass Substrate

Journal of The Electrochemical Society ◽

10.1149/1.1391810 ◽

1999 ◽

Vol 146 (4) ◽

pp. 1593-1596

Author(s):

Takashi Unagami

Keyword(s):

Glass Substrate ◽

Solid Phase ◽

Phase Recrystallization ◽

Si Films

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Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

MRS Proceedings ◽

10.1557/proc-25-511 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 2

Author(s):

H. Yamamoto ◽

H. Ishiwara ◽

S. Furukawa ◽

M. Tamura ◽

T. Tokuyama

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Ion Implantation ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Si Substrates ◽

Transmission Electron ◽

Amorphous Si ◽

Si Films ◽

Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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