Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

1986 ◽  
Vol 25 (Part 1, No. 3) ◽  
pp. 432-434 ◽  
Author(s):  
Kazuo Masaki ◽  
Shunsuke Miyamoto
Keyword(s):  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Cell Voltage ◽  
Thickness Measurements ◽  
Gaas Epitaxial Layer

scholarly journals Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

AIP Advances ◽  
2012 ◽  
Vol 2 (1) ◽  
pp. 012177 ◽  
Author(s):  
Yoshinobu Aoyagi ◽  
Misaichi Takeuchi ◽  
Sohachi Iwai ◽  
Hideki Hirayama
Keyword(s):  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Pulse Supply

Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine

1976 ◽  
Vol 123 (8) ◽  
pp. 1227-1231 ◽  
Author(s):  
Yoshiro Nakayama ◽  
Shinji Ohkawa ◽  
Hisao Hashimoto ◽  
Hajime Ishikawa
Keyword(s):  
Epitaxial Layer ◽  
Gaas Epitaxial Layer

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

2018 ◽  
Vol 924 ◽  
pp. 432-435 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Johji Nishio ◽  
Ryosuke Iijima ◽  
Akira Miyasaka ◽  
Hirokuni Asamizu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Carrier Lifetime ◽  
Epitaxial Layers ◽  
Carrier Lifetimes ◽  
Post Annealing

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.

A Method for Determining a GaAs Epitaxial Layer Impurity Profile

1975 ◽  
Vol 14 (7) ◽  
pp. 991-998 ◽  
Author(s):  
Akiyasu Yamashita ◽  
Tatsuo Aoki ◽  
Masao Yamaguchi
Keyword(s):  
Epitaxial Layer ◽  
Impurity Profile ◽  
Gaas Epitaxial Layer
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