Reduction of Stress in GaAs with In-Doped GaAs Intermediate Layer Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 3808-3811 ◽  
Author(s):  
Eiji Yamaichi ◽  
Sachiko Onozawa ◽  
Takashi Ueda ◽  
Chouho Yamagishi ◽  
Masahiro Akiyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Metalorganic Chemical

Catalyst-Free InGaP Nanoneedles Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

2013 ◽  
Vol 333-335 ◽  
pp. 1975-1978
Author(s):  
Peng Zhang ◽  
Yan Liu ◽  
Jing Wei Guo ◽  
Xiao Pin Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Sem Images ◽  
Catalyst Free ◽  
Metalorganic Chemical ◽  
Scanning Electron

Catalyst-free InGaP nanoneedles were grown on Si substrate via metalorganic chemical vapor deposition. From scanning electron microscope (SEM) images, various nanoneedles were observed and the relevant growth mechanism was discussed.

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