Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied byIn SituScanning Microprobe Reflection High-Energy Electron Diffraction
1993 ◽
Vol 32
(Part 2, No. 8B)
◽
pp. L1117-L1119
◽
Keyword(s):
1992 ◽
Vol 10
(2)
◽
pp. 918
◽
1994 ◽
Vol 137
(1-2)
◽
pp. 187-194
◽
Keyword(s):
1996 ◽
Vol 35
(Part 2, No. 3B)
◽
pp. L366-L369
◽
Keyword(s):