Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1465-L1468 ◽  
Author(s):  
Noriaki Nakayama ◽  
Yasuaki Tsuchiya ◽  
Satoru Tamada ◽  
Kouji Kosuge ◽  
Shinji Nagata ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Rf Magnetron Sputtering ◽  
Amorphous Carbon Nitride ◽  
Reactive Rf Magnetron Sputtering

Structural properties of amorphous carbon nitride films prepared by ion beam assisted deposition

2004 ◽  
Vol 338-340 ◽  
pp. 486-489 ◽  
Author(s):  
A.S. Ferlauto ◽  
A. Champi ◽  
C.A. Figueroa ◽  
C.T.M. Ribeiro ◽  
F.C. Marques ◽  
...  
Keyword(s):  
Structural Properties ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Amorphous Carbon Nitride

Influence of Zr Doping on the Tribological Properties of Amorphous Carbon-Nitride Coating

2019 ◽  
Vol 823 ◽  
pp. 9-14
Author(s):  
Yen Liang Su ◽  
Sun Hui Yao ◽  
Yu Chen Lai ◽  
Huang Ming Wu
Keyword(s):  
Magnetron Sputtering ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Tribological Behavior ◽  
Nitride Coating ◽  
Wear Performance ◽  
Amorphous Carbon Nitride ◽  
Pin On Disk ◽  
Nanohardness Tester ◽  
Sputtering System

This study aimed to understand the influence of small amount of Zr doping of amorphous carbonitride (a-CN) coatings on the structure, and mechanical and tribological behavior. The coatings were prepared using a four-target close-field unbalance magnetron sputtering system; two graphite, one Ti and one Zr targets were used. GDOS, SEM, XRD and XPS were used. A surface profilometer, a nanohardness tester, and a pin-on-disk wear tester were used. It was found the Zr doping resulting in the formation of ZrC and ZrN phases within the coating and the increase in the sp3 bonding fraction. The nanohardness was increased and the wear performance was largely improved.

Photoluminescence and Structural Properties of Si Nanoparticles Embedded in SiO2 Matrix by Reactive RF Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 2074-2076
Author(s):  
K. Ma ◽  
Jia You Feng
Keyword(s):  
Magnetron Sputtering ◽  
Structural Properties ◽  
Near Infrared ◽  
Silicon Oxide ◽  
Rf Magnetron Sputtering ◽  
Sio2 Matrix ◽  
Si Nanoparticles ◽  
Oxide Matrix ◽  
Reactive Rf Magnetron Sputtering ◽  
Deposited Films

In the present work, we investigate the photoluminescence (PL) and structural properties of Si nanoparticles embedded in SiO2 matrix. Si-rich silicon oxide (SRSO) films with Si concentration of 39% were synthesized by reactive RF magnetron sputtering. Annealing was performed at temperatures between 600°C and 1100°C in N2 ambient for 2h to precipitate Si nanoparticles from oxide matrix. Near infrared photoluminescence around 750nm can be clearly observed even in the as-deposited films, which indicates the existence of Si nanoparticles in films. The structural properties were analyzed by infrared absorption and Raman spectra. It is found that the structural properties strongly affect the PL properties of Si nanoparticles embedded in SiO2 matrix.

AMORPHOUS CARBON NITRIDE THIN FILM AS A BARRIER AGAINST COPPER DIFFUSION

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1127-1131 ◽  
Author(s):  
JIANG NING ◽  
S. XU ◽  
J. W. CHAI ◽  
L. K. CHEN ◽  
ALEX SEE ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Effective Diffusion ◽  
Rf Magnetron Sputtering ◽  
Copper Diffusion ◽  
Amorphous Carbon Nitride ◽  
Film Annealing

The application of carbon nitride as a barrier against copper diffusion was investigated. Amorphous carbon nitride (a-CN) thin films were prepared on Si(100) substrates by rf magnetron sputtering of graphite target in N2 plasma. A thin Cu layer was then deposited in-situ atop of the a-CN film. Annealing process was carried out in nitrogen (N2) ambient at the temperature of 400°C and 600°C respectively. The as-deposited and annealed films were characterized by x-ray photoelectron spectroscopy (XPS). The measurements show that both sp2C-N and sp3-N bonds were formed in the as-deposited carbon nitride films. The compositional analyses indicate that the deposited a-CN thin film is able to act as an effective diffusion barrier against copper at annealing temperature up to 400°C.

Sign in / Sign up

Export Citation Format

Share Document