Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Shiao-Shien Chen; James B. Kuo

doi:10.1143/jjap.34.6340

Concise Short-Channel Effect Model for Inversion-type Ultrathin Silicon-on-Insulator p-Channel Metal-Oxide-Silicon Field-Effect Transistors Based on Partitioning of Thin-Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6340 ◽

1995 ◽

Vol 34 (Part 1, No. 12A) ◽

pp. 6340-6345

Author(s):

Shiao-Shien Chen ◽

James B. Kuo

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Model ◽

Metal Oxide Silicon

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Double Gate

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Reverse Short-Channel Effect of Body Factor in Low-Fin Field-Effect Transistors Induced by Corner Effect

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.50 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 50-54 ◽

Cited By ~ 9

Author(s):

Toshiharu Nagumo ◽

Toshiro Hiramoto

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Corner Effect ◽

Short Channel Effect ◽

Channel Effect

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Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2096 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2096-2100 ◽

Cited By ~ 4

Author(s):

Hideki Oka ◽

Ryo Tanabe ◽

Norio Sadachika ◽

Akihiro Yumisaki ◽

Mitiko Miura-Mattausch

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor

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Dependences of Short-Channel Effect on Doping Profiles for Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3959 ◽

2006 ◽

Vol 45 (5A) ◽

pp. 3959-3971 ◽

Cited By ~ 1

Author(s):

Chun-Hsing Shih ◽

Chenhsin Lien

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect ◽

Effect Transistor ◽

Doping Profiles

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1417995 ◽

2002 ◽

Vol 91 (1) ◽

pp. 420 ◽

Cited By ~ 11

Author(s):

Jianan Yang ◽

Gerold W. Neudeck ◽

John P. Denton

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Stacking Fault ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Thin Film Silicon

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An Efficient Quantum-Based Model for the Threshold Voltage of Thin Film Double Gate/Silicon on Insulator Silicon Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.024304 ◽

2010 ◽

Vol 49 (2) ◽

pp. 024304 ◽

Cited By ~ 1

Author(s):

Saeed Mohammadi ◽

Ali Afzali-Kusha

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate

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Short-channel effect and device design of extremely scaled tunnel field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2014.09.028 ◽

2015 ◽

Vol 55 (1) ◽

pp. 31-37 ◽

Cited By ~ 11

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Design ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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Suppression of Geometric Component of Charge Pumping Current in Thin Film Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l855 ◽

1998 ◽

Vol 37 (Part 2, No. 7B) ◽

pp. L855-L858 ◽

Cited By ~ 8

Author(s):

Tran Ngoc Duyet ◽

Hiroki Ishikuro ◽

Makoto Takamiya ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Thin Film Silicon

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