Recombination Dynamics in ZnxCd$_{\bf 1-\ninmb{x}}$S Single Quantum Well Grown by Photoassisted Metalorganic Vapour Phase Epitaxy by Time-Resolved Photoluminescence Spectroscopy

1995 ◽  
Vol 34 (Part 2, No. 10B) ◽  
pp. L1336-L1339 ◽  
Author(s):  
Hervé Dumont ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Photoluminescence Spectroscopy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Time Resolved ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Time Resolved Photoluminescence ◽  
Recombination Dynamics

Time-resolved photoluminescence from In x Ga 1-x As/GaAs single quantum well

1989 ◽  
Vol 6 (12) ◽  
pp. 559-562 ◽  
Author(s):  
Qian Shixiong ◽  
Yuan Shu ◽  
Li Yufen ◽  
T G Andersson ◽  
Chen Zonggui ◽  
...  
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Time-resolved four-wave-mixing spectroscopy of excitons in a single quantum well

2007 ◽  
Vol 75 (3) ◽  
Author(s):  
J. A. Davis ◽  
J. J. Wathen ◽  
V. Blanchet ◽  
R. T. Phillips
Keyword(s):  
Quantum Well ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Time Resolved

Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

2000 ◽  
Vol 76 (12) ◽  
pp. 1546-1548 ◽  
Author(s):  
Hiromitsu Kudo ◽  
Hiroki Ishibashi ◽  
Ruisheng Zheng ◽  
Yoichi Yamada ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Well ◽  
Reverse Bias ◽  
Light Emitting Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Recombination Dynamics

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

2010 ◽  
Vol 96 (1) ◽  
pp. 011901 ◽  
Author(s):  
M. Syperek ◽  
P. Leszczyński ◽  
J. Misiewicz ◽  
E. M. Pavelescu ◽  
C. Gilfert ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Photoluminescence Spectroscopy ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Tunnel Injection
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