Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress

Man-Siu Tse; Terence Kin-Shun Wong; Chew-Hoe Ang

doi:10.1143/jjap.35.2095

Post-Stress Interface-Trap Generation in P-Channel Metal-Oxide-Semicondutor Field-Effect-Transistors after Hot-Electron Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2095 ◽

1996 ◽

Vol 35 (Part 1, No. 4A) ◽

pp. 2095-2101

Author(s):

Man-Siu Tse ◽

Terence Kin-Shun Wong ◽

Chew-Hoe Ang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface Trap ◽

Hot Electron ◽

Post Stress

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Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

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On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1389318 ◽

2001 ◽

Vol 79 (6) ◽

pp. 863-865 ◽

Cited By ~ 4

Author(s):

Kangguo Cheng ◽

Jean-Pierre Leburton ◽

Karl Hess ◽

Joseph W. Lyding

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Hot Electron ◽

Carrier Injection

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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Hot-electron injection in stacked-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1890445 ◽

2005 ◽

Vol 97 (10) ◽

pp. 104501

Author(s):

M. P. Temple ◽

D. W. Dyke ◽

P. A. Childs

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Injection ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Hot Electron Injection

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Direct observation of channel hot-electron energy in short-channel metal-oxide-semiconductor field-effect transistors

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667466 ◽

2010 ◽

Author(s):

Gang Zhang ◽

Cheng Yang ◽

Hua-Min Li ◽

Tian-zi Shen ◽

Won Jong Yoo

Keyword(s):

Metal Oxide ◽

Electron Energy ◽

Direct Observation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Short Channel

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Post-stress Dual-trap Interaction in Hot-carrier Stressed Submicrometer N-channel Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6171 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6171-6174

Author(s):

Wai Kin Chim ◽

Thiam Joo Chua

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Post Stress

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Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress

Superlattices and Microstructures ◽

10.1006/spmi.2000.0859 ◽

2000 ◽

Vol 27 (5-6) ◽

pp. 441-445 ◽

Cited By ~ 2

Author(s):

B.R. Tuttle ◽

K. Hess ◽

L.F. Register

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Defect Creation ◽

Related Defect

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A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.2439 ◽

1998 ◽

Vol 37 (Part 1, No. 5A) ◽

pp. 2439-2444 ◽

Cited By ~ 1

Author(s):

Nan-Jian Wu ◽

Naoto Shibata ◽

Yoshihito Amemiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type ◽

Post Stress

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Bulk and interface trap generation under negative bias temperature instability stress of p-channel metal-oxide-semiconductor field-effect transistors with nitrogen and silicon incorporated HfO2 gate dielectrics

Applied Physics Letters ◽

10.1063/1.3541879 ◽

2011 ◽

Vol 98 (6) ◽

pp. 063504 ◽

Cited By ~ 8

Author(s):

Changhwan Choi ◽

Jack C. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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A new third‐level charge pumping method for accurate determination of interface‐trap parameters in metal‐oxide‐semiconductor field‐effect‐transistors

Review of Scientific Instruments ◽

10.1063/1.1144713 ◽

1994 ◽

Vol 65 (6) ◽

pp. 2141-2142 ◽

Cited By ~ 14

Author(s):

Jean‐Luc Autran ◽

Bernard Balland

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Accurate Determination ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Charge Pumping

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