Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation

1997 ◽  
Vol 36 (Part 1, No. 4A) ◽  
pp. 2068-2072 ◽  
Author(s):  
Hajime Sasaki ◽  
Kazuo Hayashi ◽  
Takashi Fujioka ◽  
Kiyoshi Mizuguchi ◽  
Byeongdeok Yea ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Surface States ◽  
Effect Transistor ◽  
High Temperature Operation

scholarly journals Resolving ambiguities in nanowire field-effect transistor characterization

Nanoscale ◽  
2015 ◽  
Vol 7 (43) ◽  
pp. 18188-18197 ◽  
Author(s):  
Sebastian Heedt ◽  
Isabel Otto ◽  
Kamil Sladek ◽  
Hilde Hardtdegen ◽  
Jürgen Schubert ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Evaluation Method ◽  
Surface States ◽  
Profound Impact ◽  
Nanowire Surface ◽  
Dual Gate ◽  
Effect Transistor

The profound impact of InAs nanowire surface states on transistor functionality is quantified using a novel dual-gate FET evaluation method in conjunction with finite element method simulations of nanowire electrostatics.

Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

1998 ◽  
Vol 37 (Part 2, No. 5A) ◽  
pp. L482-L483 ◽  
Author(s):  
Seikoh Yoshida ◽  
Joe Suzuki
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications

2016 ◽  
Vol 13 (2) ◽  
pp. 39-50 ◽  
Author(s):  
Zheng Chen ◽  
Yiying Yao ◽  
Wenli Zhang ◽  
Dushan Boroyevich ◽  
Khai Ngo ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Operating Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Packaging Materials ◽  
Temperature Capability ◽  
Effect Transistor

This article presents a 1,200-V, 120-A silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFET) phase-leg module capable of operating at 200°C ambient temperature. Paralleling six 20-A MOSFET bare dice for each switch, this module outperforms the commercial SiC modules in higher operating temperature and lower package parasitics at a comparable power rating. The module's high-temperature capability is validated through the extensive characterizations of the SiC MOSFET, as well as the careful selections of suitable packaging materials. Particularly, the sealed-step-edge technology is implemented on the direct-bonded-copper substrates to improve the module's thermal cycling lifetime. Though still based on the regular wire-bond structure, the module is able to achieve over 40% reduction in the switching loop inductance compared with a commercial SiC module by optimizing its internal layout. By further embedding decoupling capacitors directly on the substrates, the module also allows SiC MOSFETs to be switched twice faster with only one-third turn-off overvoltages compared with the commercial module.

InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

2000 ◽  
Vol 36 (22) ◽  
pp. 1886 ◽  
Author(s):  
Kuo-Hui Yu ◽  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Kuan-Po Lin ◽  
Chih-Hung Yen ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Temperature Applications

Low frequency effects of surface states on 4H-SiC metal-semiconductor field effect transistor

2003 ◽  
Vol 12 (4) ◽  
pp. 389-393
Author(s):  
Yang Lin-An ◽  
Yu Chun-Li ◽  
Zhang Yi-Men ◽  
Zhang Yu-Ming
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Frequency ◽  
Surface States ◽  
Frequency Effects ◽  
Effect Transistor

Fabrication and Characterisation of 1200V 4H-SiC VJFET

2014 ◽  
Vol 716-717 ◽  
pp. 1434-1437
Author(s):  
Gang Chen ◽  
Song Bai ◽  
Ao Liu ◽  
Run Hua Huang ◽  
Yong Hong Tao ◽  
...  
Keyword(s):  
High Temperature ◽  
Continuous Improvement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Power Devices ◽  
Reverse Voltage ◽  
Blocking Voltage ◽  
Effect Transistor

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm2 and current is 11 A at VG= 3 V and VD = 2 V, with related specific on-resistance 5.5 mΩ·cm2. The device exceeds 1200 V at gate bias VG = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

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