Convergent Beam Electron Diffraction Measurement for Local Strain Distribution in Si around aNiSi2Island

1997 ◽  
Vol 36 (Part 1, No. 8) ◽  
pp. 5072-5078 ◽  
Author(s):  
Yutaka Wakayama ◽  
Yumiko Takahashi ◽  
Shun-ichiro Tanaka
Keyword(s):  
Electron Diffraction ◽  
Strain Distribution ◽  
Local Strain ◽  
Convergent Beam Electron Diffraction ◽  
Diffraction Measurement ◽  
Beam Electron ◽  
Convergent Beam ◽  
Electron Diffraction Measurement

Measurement of Local Strain in Thin Aluminium Interconnects Using Convergent Beam Electron Diffraction (CBED)

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Krämer ◽  
J. Mayer
Keyword(s):  
Electron Diffraction ◽  
Axial Strain ◽  
Local Strain ◽  
Convergent Beam Electron Diffraction ◽  
Elastic Behaviour ◽  
Large Strains ◽  
Beam Electron ◽  
Single Grain ◽  
Convergent Beam ◽  
Line Positions

AbstractEnergy filtered convergent beam electron diffraction (CBED) was used to investigate localized strain in aluminium interconnects. An analysis of the higher order Laue zone (HOLZ) line positions in CBED patterns makes it possible to measure the lattice strain with high accuracy (∼10−4) and high spatial resolution (10 to 100 nm). The strain development in a single grain was measured during thermal cycling between −170°C and + 100°C. The grain showed reversible, elastic behaviour over the whole temperature range building up large strains at low temperatures. By comparing with finite element simulations, a detailed understanding of the tri-axial strain state could be achieved.

Direct Comparison of Convergent Beam Electron Diffraction and Geometric Phase Analysis for Local Strain Measurement

2010 ◽  
Vol 16 (S2) ◽  
pp. 742-743
Author(s):  
D Diercks ◽  
G Lian ◽  
J Chung ◽  
M Kaufman
Keyword(s):  
Electron Diffraction ◽  
Phase Analysis ◽  
Geometric Phase ◽  
Strain Measurement ◽  
Local Strain ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Geometric Phase Analysis ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Strain Distribution in Heterolayers with low Misfit as Revealed by Convergent Beam Illumination Methods

1992 ◽  
Vol 280 ◽  
Author(s):  
Zuzanna Ljjleental-Weber ◽  
T. Kaneyama ◽  
M. Terauchi ◽  
M. Tanaka
Keyword(s):  
Electron Diffraction ◽  
Low Temperature ◽  
Strain Distribution ◽  
Gaas Substrate ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Local Measurement ◽  
Beam Electron ◽  
Convergent Beam ◽  
As Solubility

ABSTRACTConvergent beam electron diffraction (CBED) was applied to the local measurement of lattice parameter across a strained interface with small mismatch. GaAs layers grown at low temperature with excess As (with 0.15% misfit) on a GaAs substrate were chosen for these studies. Tetragonal distortion was detected in the layer up to 0.5μm from the interface. With an increase of the layer thickness lowering of the symmetry of these CBED patterns was observed. This lowering of symmetry is most probably due to saturation of As solubility and the strain build into these layer.

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